BFS505,115 NXP Semiconductors, BFS505,115 Datasheet - Page 7

• Manufacturer Part Number: BFS505,115
• Description: TRANS NPN 15V 9GHZ SOT323
• Manufacturer: NXP Semiconductors

Specifications of BFS505,115

• Package / Case: SC-70-3, SOT-323-3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.2dB ~ 2.1dB @ 900MHz
• Power - Max: 150mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 5mA, 6V
• Current - Collector (ic) (max): 18mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60 @ 5mA @ 6V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.018 A
• Power Dissipation: 150 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1991-2; 934021370115; BFS505 T/R

NXP Semiconductors
September 1995
handbook, halfpage
NPN 9 GHz wideband transistor
V
Fig.10 Minimum noise figure as a function of
CE
(dB)
F
= 6 V; T
4
3
2
1
0
10
−1
collector current.
amb
f = 2 GHz
900 MHz
500 MHz
= 25 C.
1
I C (mA)
MRC018
10
7
handbook, halfpage
V
Fig.11 Minimum noise figure as a function of
CE
(dB)
F
= 6 V; T
4
3
2
1
0
10
−1
frequency.
amb
= 25 C.
1
I
C
1.25 mA
= 5 mA
Product specification
f (GHz)
MRC012
BFS505
10