BFS505,115 NXP Semiconductors, BFS505,115 Datasheet - Page 8
![TRANS NPN 15V 9GHZ SOT323](/photos/5/24/52427/568-umt3_sot-323_sc-70_sot323_sml.jpg)
BFS505,115
Manufacturer Part Number
BFS505,115
Description
TRANS NPN 15V 9GHZ SOT323
Manufacturer
NXP Semiconductors
Datasheet
1.BFS505115.pdf
(14 pages)
Specifications of BFS505,115
Package / Case
SC-70-3, SOT-323-3
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
9GHz
Noise Figure (db Typ @ F)
1.2dB ~ 2.1dB @ 900MHz
Power - Max
150mW
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 5mA, 6V
Current - Collector (ic) (max)
18mA
Mounting Type
Surface Mount
Dc Current Gain Hfe Max
60 @ 5mA @ 6V
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
9000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
0.018 A
Power Dissipation
150 mW
Maximum Operating Temperature
+ 175 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1991-2
934021370115
BFS505 T/R
934021370115
BFS505 T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BFS505,115
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
September 1995
handbook, full pagewidth
handbook, full pagewidth
NPN 9 GHz wideband transistor
I
f = 900 MHz; Z
I
f = 2 GHz; Z
C
C
= 1.25 mA; V
= 1.25 mA; V
o
= 50 .
o
CE
CE
= 50 .
= 6 V;
= 6 V;
stability
circle
180°
180°
0
0
−135°
−135°
135°
135°
0.2
0.2
0.2
0.2
pot. unst.
region
0.2
0.2
0.5
0.5
0.5
0.5
Fig.12 Noise circle.
Fig.13 Noise circle.
0.5
0.5
−90°
−90°
90°
90°
8
1
1
1
1
1
1
F = 4 dB
F = 2.5 dB
F = 3 dB
F min = 1.9 dB
F = 3 dB
2
2
F min = 1. 2 dB
Γ OPT
F = 2 dB
F = 1.5 dB
Γ OPT
2
2
2
2
5
5
−45°
−45°
45°
45°
5
5
5
5
MRC073
MRC074
0°
0°
1.0
0.8
0.6
0.4
0.2
0
1.0
1.0
0.8
0.6
0.4
0.2
0
1.0
Product specification
BFS505