BFS505,115 NXP Semiconductors, BFS505,115 Datasheet - Page 4
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BFS505,115
Manufacturer Part Number
BFS505,115
Description
TRANS NPN 15V 9GHZ SOT323
Manufacturer
NXP Semiconductors
Datasheet
1.BFS505115.pdf
(14 pages)
Specifications of BFS505,115
Package / Case
SC-70-3, SOT-323-3
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
9GHz
Noise Figure (db Typ @ F)
1.2dB ~ 2.1dB @ 900MHz
Power - Max
150mW
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 5mA, 6V
Current - Collector (ic) (max)
18mA
Mounting Type
Surface Mount
Dc Current Gain Hfe Max
60 @ 5mA @ 6V
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
9000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
0.018 A
Power Dissipation
150 mW
Maximum Operating Temperature
+ 175 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1991-2
934021370115
BFS505 T/R
934021370115
BFS505 T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BFS505,115
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
CHARACTERISTICS
T
Notes
1. G
2. I
September 1995
I
h
C
C
C
f
G
S
F
P
ITO
j
CBO
T
SYMBOL
FE
= 25 C, unless otherwise specified.
L1
NPN 9 GHz wideband transistor
e
c
re
UM
21
f
C
p
G
UM
2
= 900 MHz; f
= 5 mA; V
UM
is the maximum unilateral power gain, assuming S
=
10 log
collector cut-off current
DC current gain
emitter capacitance
collector capacitance
feedback capacitance
transition frequency
maximum unilateral power gain
(note 1)
insertion power gain
noise figure
output power at 1 dB gain
compression
third order intercept point
CE
q
= 6 V; R
--------------------------------------------------------- - dB.
= 902 MHz; measured at f
1
PARAMETER
–
S
11
L
= 50 ; f = 900 MHz; T
S
2
1
21
2
–
S
22
2
(2pq)
I
I
I
I
I
I
T
I
T
I
T
I
T
f = 900 MHz; T
f = 900 MHz; T
f = 2 GHz; T
I
f = 900 MHz; T
note 2
E
C
C
E
C
C
C
C
C
c
amb
amb
amb
amb
s
s
s
= 5 mA; V
= 0; V
= i
= 5 mA; V
= i
= 0; V
= 5 mA; V
= 5 mA; V
= 5 mA; V
= 5 mA; V
=
=
=
e
amb
c
= 898 MHz and at f
= 25 C
= 25 C
= 25 C
= 25 C
opt
opt
opt
= 0; V
= 0; V
CB
CB
; I
; I
; I
= 25 C;
C
C
C
= 6 V
= 0.5 V; f = 1 MHz
4
CE
12
= 1.25 mA; V
= 5 mA; V
= 1.25 mA; V
amb
EB
CB
CE
CE
CE
CE
CE
CONDITIONS
is zero and
amb
amb
amb
= 6 V; R
= 0.5 V; f = 1 MHz
= 6 V
= 6 V; f = 1 MHz
= 6 V; f = 1 GHz;
= 6 V; f = 900 MHz;
= 6 V; f = 2 GHz;
= 6 V; f = 900 MHz;
= 25 C
= 25 C
= 25 C
= 25 C
CE
L
(2qp)
= 50 ;
= 6 V;
CE
CE
= 6 V;
= 6 V;
= 904 MHz.
60
13
MIN.
120
0.4
0.4
0.3
9
17
10
14
1.2
1.6
1.9
4
10
TYP.
Product specification
BFS505
50
250
1.7
2.1
MAX.
nA
pF
pF
pF
GHz
dB
dB
dB
dB
dB
dB
dBm
dBm
UNIT