BFS505,115 NXP Semiconductors, BFS505,115 Datasheet - Page 5
![TRANS NPN 15V 9GHZ SOT323](/photos/5/24/52427/568-umt3_sot-323_sc-70_sot323_sml.jpg)
BFS505,115
Manufacturer Part Number
BFS505,115
Description
TRANS NPN 15V 9GHZ SOT323
Manufacturer
NXP Semiconductors
Datasheet
1.BFS505115.pdf
(14 pages)
Specifications of BFS505,115
Package / Case
SC-70-3, SOT-323-3
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
9GHz
Noise Figure (db Typ @ F)
1.2dB ~ 2.1dB @ 900MHz
Power - Max
150mW
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 5mA, 6V
Current - Collector (ic) (max)
18mA
Mounting Type
Surface Mount
Dc Current Gain Hfe Max
60 @ 5mA @ 6V
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
9000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
0.018 A
Power Dissipation
150 mW
Maximum Operating Temperature
+ 175 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1991-2
934021370115
BFS505 T/R
934021370115
BFS505 T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BFS505,115
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
September 1995
handbook, halfpage
handbook, halfpage
NPN 9 GHz wideband transistor
I
Fig.4
C re
(pF)
C
(mW)
P
= 0; f = 1 MHz.
tot
200
150
100
0.5
0.4
0.3
0.2
0.1
50
0
0
0
0
Feedback capacitance as a function of
collector-base voltage.
Fig.2 Power derating curve.
2
50
4
100
6
150
8
T
MRC020 - 1
s
V
MRC011
CB
(
o
C)
(V)
200
10
5
handbook, halfpage
handbook, halfpage
V
Fig.3
f = 1 GHz; T
Fig.5
(GHz)
h FE
CE
f T
200
150
100
= 6 V; T
50
12
10
10
0
10
8
6
4
2
0
−3
−1
DC current gain as a function of collector
current.
Transition frequency as a function of
collector current.
amb
j
= 25 C.
10
= 25 C.
−2
1
10
−1
V
CE
1
= 8 V
10
3 V
Product specification
I C (mA)
10
I C (mA)
MRC019
BFS505
MRC013
10
10
2
2