BFG21W,115 NXP Semiconductors, BFG21W,115 Datasheet - Page 2

• Manufacturer Part Number: BFG21W,115
• Description: TRANS NPN 15V .5A 18GHZ CMPAK-4
• Manufacturer: NXP Semiconductors

Specifications of BFG21W,115

• Package / Case: CMPAK-4
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.5V
• Frequency - Transition: 18GHz
• Power - Max: 600mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 200mA, 2V
• Current - Collector (ic) (max): 500mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 40 @ 200mA @ 2V
• Mounting Style: SMD/SMT
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Maximum Operating Frequency: 18000 MHz (Min)
• Collector- Emitter Voltage Vceo Max: 4.5 V
• Emitter- Base Voltage Vebo: 1 V
• Continuous Collector Current: 0.5 A
• Power Dissipation: 600 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1974-2; 934047480115; BFG21W T/R

NXP Semiconductors
FEATURES
 High power gain
 High efficiency
 1.9 GHz operating area
 Linear and non-linear operation.
APPLICATIONS
 Common emitter class-AB output stage in hand held
 Driver for DCS1800, 1900.
DESCRIPTION
NPN double polysilicon bipolar power transistor with
buried layer for low voltage medium power applications
encapsulated in a plastic, 4-pin dual-emitter SOT343R
package.
QUICK REFERENCE DATA
RF performance at T
1998 Jul 06
Pulsed class-AB;  < 1 : 2; t
radio equipment at 1.9 GHz such as DECT, PHS, etc.
UHF power transistor
MODE OF OPERATION
s
 60 C in a common emitter test circuit.
p
= 5 ms
(GHz)
1.9
f
2
PINNING
handbook, halfpage
Marking code: P1.
V
3.6
(V)
CE
Fig.1 Simplified outline SOT343R.
PIN
1, 3
2
4
(dBm)
P
26
3
2
Top view
L
emitter
base
collector
MSB842
4
1
(dB)
10
G
Product specification
DESCRIPTION
p
BFG21W
typ.55
(%)

C