BFG21W,115 NXP Semiconductors, BFG21W,115 Datasheet - Page 3

• Manufacturer Part Number: BFG21W,115
• Description: TRANS NPN 15V .5A 18GHZ CMPAK-4
• Manufacturer: NXP Semiconductors

Specifications of BFG21W,115

• Package / Case: CMPAK-4
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.5V
• Frequency - Transition: 18GHz
• Power - Max: 600mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 200mA, 2V
• Current - Collector (ic) (max): 500mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 40 @ 200mA @ 2V
• Mounting Style: SMD/SMT
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Maximum Operating Frequency: 18000 MHz (Min)
• Collector- Emitter Voltage Vceo Max: 4.5 V
• Emitter- Base Voltage Vebo: 1 V
• Continuous Collector Current: 0.5 A
• Power Dissipation: 600 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1974-2; 934047480115; BFG21W T/R

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. T
THERMAL CHARACTERISTICS
Note
1. T
1998 Jul 06
V
V
V
I
P
T
T
R
handbook, full pagewidth
SYMBOL
SYMBOL
C
stg
j
CBO
CEO
EBO
tot
UHF power transistor
th j-s
At temperature stabilization solder point has been reached.
(K/W)
s
s
R th
is the temperature at the soldering point of the emitter pins.
is the temperature at the soldering point of the emitter pins.
10
10
10
10
1
3
2
−6
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
operating junction temperature
thermal resistance from junction to
soldering point
Fig.2 Transient thermal resistance as a function of pulse time; typical values.
0.75
0.33
0.05
0.02
0.01
δ =
0.5
0.2
0.1
PARAMETER
PARAMETER
10
1
0
−5
10
−4
open emitter
open base
open collector
T
T
s
s
 60 C; note 1
 60 C; P
10
3
−3
CONDITIONS
tot
CONDITIONS
= 600 mW; note 1
10
−2





65

P
MIN.
10
t p
−1
T
15
4.5
1
500
600
+150
150
Product specification
VALUE
δ
MAX.
t p (s)
150
=
t p
T
BFG21W
t
MGM219
V
V
V
mA
mW
C
C
1
UNIT
UNIT
K/W