BFG21W,115 NXP Semiconductors, BFG21W,115 Datasheet - Page 7

• Manufacturer Part Number: BFG21W,115
• Description: TRANS NPN 15V .5A 18GHZ CMPAK-4
• Manufacturer: NXP Semiconductors

Specifications of BFG21W,115

• Package / Case: CMPAK-4
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.5V
• Frequency - Transition: 18GHz
• Power - Max: 600mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 200mA, 2V
• Current - Collector (ic) (max): 500mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 40 @ 200mA @ 2V
• Mounting Style: SMD/SMT
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Maximum Operating Frequency: 18000 MHz (Min)
• Collector- Emitter Voltage Vceo Max: 4.5 V
• Emitter- Base Voltage Vebo: 1 V
• Continuous Collector Current: 0.5 A
• Power Dissipation: 600 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1974-2; 934047480115; BFG21W T/R

NXP Semiconductors
1998 Jul 06
handbook, halfpage
UHF power transistor
Fig.6
V
CE
(Ω)
Z i
= 3.6 V; I
10
8
6
4
2
0
1.8
Input impedance as function of frequency
(series components); typical values.
CQ
= 1 mA; P
1.85
L
= 26 dBm; T
x i
r i
1.9
s
 60 C.
1.95
f (GHz)
MGM223
2.0
7
handbook, halfpage
Fig.7
V
CE
(Ω)
Z L
= 3.6 V; I
16
12
−4
−8
8
4
0
1.8
Load impedance as a function of frequency
(series components); typical values.
CQ
= 1 mA; P
1.85
L
= 26 dBm; T
R L
X L
1.9
s
 60 C.
Product specification
1.95
f (GHz)
BFG21W
MGM224
2.0