BFG21W,115 NXP Semiconductors, BFG21W,115 Datasheet - Page 6

• Manufacturer Part Number: BFG21W,115
• Description: TRANS NPN 15V .5A 18GHZ CMPAK-4
• Manufacturer: NXP Semiconductors

Specifications of BFG21W,115

• Package / Case: CMPAK-4
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.5V
• Frequency - Transition: 18GHz
• Power - Max: 600mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 200mA, 2V
• Current - Collector (ic) (max): 500mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 40 @ 200mA @ 2V
• Mounting Style: SMD/SMT
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Maximum Operating Frequency: 18000 MHz (Min)
• Collector- Emitter Voltage Vceo Max: 4.5 V
• Emitter- Base Voltage Vebo: 1 V
• Continuous Collector Current: 0.5 A
• Power Dissipation: 600 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1974-2; 934047480115; BFG21W T/R

NXP Semiconductors
1998 Jul 06
handbook, full pagewidth
UHF power transistor
Dimensions in mm.
The components are situated on one side of the copper-clad PTFE fibre-glass board, the other side is unetched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by through metallization.
Fig.5 Printed-circuit board and component lay-out for 1.9 GHz class-AB test-circuit in Fig.4.
input
C1
TR1
R2
C3
R1
C2
V C
L1
L2
DUT
45
6
L4
L3
V S
C4
R3
L5
C6
C7
output
C5
MGM222
35
Product specification
BFG21W