BFP 640 E6327 Infineon Technologies, BFP 640 E6327 Datasheet - Page 7

• Manufacturer Part Number: BFP 640 E6327
• Description: TRANSISTOR NPN SIGE RF SOT-343
• Manufacturer: Infineon Technologies

Specifications of BFP 640 E6327

• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.5V
• Frequency - Transition: 40GHz
• Noise Figure (db Typ @ F): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
• Gain: 24dB
• Power - Max: 200mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 110 @ 30mA, 3V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Collector- Emitter Voltage Vceo Max: 4 V
• Continuous Collector Current: 50 mA
• Emitter- Base Voltage Vebo: 1.2 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 200 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFP 640 E6327; BFP640E6327; BFP640E6327; BFP640E6327INTR; BFP640E6327XT; SP000012991

Power gain G
I
f = parameter
Noise figure F =
V
C
CE
= 30mA
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
dB
= 3V, f = 1.8 GHz
2
1
0
30
20
15
10
0
5
0
0
0.5
10
1
ma
1.5
, G
20
( I
ms
2
C
I
c
)
[mA]
=
2.5
30
( V
3
CE
Z
Z
3.5
S
S
= Z
= 50
)
Sopt
40
4
0.9GHz
1.8GHz
2.4GHz
3GHz
4GHz
5GHz
6GHz
V
V
CE
50
5
7
Noise figure F =
V
Noise figure F =
V
CE
CE
2.4
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
= 3V, Z
2
1
0
= 3V, Z
2
1
0
0
0
1
S
S
10
= Z
= Z
2
Sopt
Sopt
20
( I
( f )
3
C
f [GHz]
I
c
)
[mA]
4
30
I
I
C
C
2007-05-29
= 30mA
= 5.0mA
5
f = 6GHz
f = 5GHz
f = 4GHz
f = 3GHz
f = 2.4GHz
f = 1.8GHz
f = 0.9GHz
40
BFP640
6
50
7