BFR 93A E6327 Infineon Technologies, BFR 93A E6327 Datasheet

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BFR 93A E6327

Manufacturer Part Number
BFR 93A E6327
Description
TRANSISTOR RF NPN 12V SOT-23
Manufacturer
Infineon Technologies
Datasheet

Specifications of BFR 93A E6327

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
12V
Frequency - Transition
6GHz
Noise Figure (db Typ @ F)
1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
Gain
9.5dB ~ 14.5dB
Power - Max
300mW
Dc Current Gain (hfe) (min) @ Ic, Vce
70 @ 30mA, 8V
Current - Collector (ic) (max)
90mA
Mounting Type
Surface Mount
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Power Dissipation
300 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BFR93AE6327XT
SP000011066
NPN Silicon RF Transistor*
* Short term description
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFR93A
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1
2
3
Pb-containing package may be available upon special request
T
For calculation of R
S
For low-noise, high gain broadband amplifiers at
Pb-free (RoHS compliant) package
Qualified according AEC Q101
collector currents from 2 mA to 30 mA
S
is measured on the collector lead at the soldering point to the pcb
63 °C
thJA
please refer to Application Note Thermal Resistance
2)
3)
Marking
R2s
1)
1=B
1
Symbol
V
V
V
V
I
I
P
T
T
T
Symbol
R
Pin Configuration
C
B
CEO
CES
CBO
EBO
tot
j
A
stg
thJS
2=E
3
3=C
-65 ... 150
-65 ... 150
Value
Value
300
150
12
20
20
90
290
2
9
Package
SOT23
2007-04-26
BFR93A
1
Unit
V
mA
mW
°C
Unit
K/W
2

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BFR 93A E6327 Summary of contents

Page 1

NPN Silicon RF Transistor* For low-noise, high gain broadband amplifiers at collector currents from Pb-free (RoHS compliant) package Qualified according AEC Q101 * Short term description ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type ...

Page 2

Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-emitter cutoff current Collector-base cutoff current ...

Page 3

Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA 500 MHz C CE Collector-base capacitance MHz ...

Page 4

... MJS = 3 - XTI = All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil- und Satellitentechnik (IMST) Package Equivalent Circuit: For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www ...

Page 5

Total power dissipation P 400 mW 300 250 200 150 100 Permissible Pulse Load totmax totDC 0.005 0.01 0.02 ...

Page 6

Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT23 2.9 ±0 +0.1 0.4 -0.05 C 0.95 1.9 0.25 B ...

Page 7

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

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