KSC2757YMTF Fairchild Semiconductor, KSC2757YMTF Datasheet
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Manufacturer Part Number
KSC2757YMTF
Description
TRANSISTOR NPN 15V 50MA SOT-23
Manufacturer
Fairchild Semiconductor
Specifications of KSC2757YMTF
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
1.1GHz
Power - Max
150mW
Dc Current Gain (hfe) (min) @ Ic, Vce
120 @ 5mA, 10V
Current - Collector (ic) (max)
50mA
Mounting Type
Surface Mount
Package / Case
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Noise Figure (db Typ @ F)
-
©2002 Fairchild Semiconductor Corporation
Mixer Oscillator for VHF Tuner
• High Current Gain Bandwidth Product : f
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
h
V
V
V
I
P
T
T
I
h
V
f
C
C
C
CBO
T
FE
Symbol
FE
J
STG
CBO
CEO
EBO
C
CE
ob
c·rbb’
Symbol
(sat)
Classification
Classification
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
h
FE
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
T
T
a
60 ~ 120
=25 C unless otherwise noted
=1100MHz (TYP)
T
Parameter
a
R
=25 C unless otherwise noted
KSC2757
Marking
V
V
I
V
V
V
f=31.9MHz
C
CB
CE
CE
CB
CE
=10mA, I
=12V, I
=10V, I
=10V, I
=10V, I
=10V, I
H3 O
Test Condition
E
C
B
C
E
C
=0
=5mA
=1mA
=5mA
=0, f=1MHz
=5mA
90 ~ 180
O
h
FE
grade
1. Base 2. Emitter 3. Collector
Min.
800
60
-55 ~ +150
3
Value
150
150
30
15
50
5
1100
Typ.
120
10
1
120 ~ 240
Max.
240
0.1
0.5
1.5
1.5
SOT-23
Y
Rev. A2, September 2002
2
Units
mW
mA
V
V
V
C
C
Units
MHz
pF
ps
V
A
Related parts for KSC2757YMTF
KSC2757YMTF Summary of contents
... V (sat) Collector-Emitter Saturation Voltage CE f Current Gain Bandwidth Product T C Output Capacitance ob C Noise Figure c·rbb’ h Classification FE Classification h FE ©2002 Fairchild Semiconductor Corporation KSC2757 =1100MHz (TYP =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition V =12V =10V, I =5mA ...
... [V], COLLECTOR-EMITTER VOLTAGE CE Figure 1. Static Characteristics 1000 100 10 0 [mA], COLLECTOR CURRENT C Figure 3. Collector-Emitter Saturation Voltage 10000 1000 100 10 0 [mA], COLLECTOR CURRENT C Figure ©2002 Fairchild Semiconductor Corporation 1000 100 = 100 0.1 10000 1000 100 0.1 10 100 Figure 4. Base-Emitter Saturation Voltage 100 V = 10V ...
... CONDUCTANCE fb Figure 9. yfb - 600 MHz 4 400 MHz 2 200 MHz 100 MHz 0 0.0 0.4 0.8 g [ms], CONDUCTANCE ob Figure 11. yob - f ©2002 Fairchild Semiconductor Corporation (Continued -20 -40 -60 -80 -100 125 150 175 200 0 0.0 yfb = -1.5 -3.0 -4.5 400 MHz -6.0 1000 MHz -7 ...
... Package Dimensions 0.40 0.03 2.90 0.95 0.03 1.90 ©2002 Fairchild Semiconductor Corporation SOT-23 0.40 0.03 0.96~1.14 0.10 0.95 0.03 0.508REF 0.03 0.03~0.10 0.38 REF +0.05 0.12 –0.023 Dimensions in Millimeters Rev. A2, September 2002 ...
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...
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