KSC2756OMTF Fairchild Semiconductor, KSC2756OMTF Datasheet - Page 3

• Manufacturer Part Number: KSC2756OMTF
• Description: TRANSISTOR NPN 20V 30MA SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of KSC2756OMTF

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 20V
• Frequency - Transition: 850MHz
• Noise Figure (db Typ @ F): 6.5dB @ 200MHz
• Gain: 15dB ~ 23dB
• Power - Max: 150mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 90 @ 5mA, 10V
• Current - Collector (ic) (max): 30mA
• Mounting Type: Surface Mount
• Package / Case: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
Typical Characteristics
15
10
5
-120
-150
90
-30
-60
-90
60
40
20
30
0
0
-50
0
Ic=3mA
Figure 11. NF, G
400MHz
5mA
0
300MHz
[dBuV/50ohm], OSC LEVEL
Figure 7. yie - f
f = 100 MHz
g
g
ie
fe
Figure 9.
20
50
[ms], CONDUCTANCE
[ms], CONDUCTANCE
100
f
f
RF
Local
CE
= 200MHz, 80dBuV/50ohm
3mA
200MHz
100
200 MHz
= 258MHz
- OSC Level
5mA
NF
Gce
150
40
300MHz
yfe=g
V
yid=g
V
I
f=100MHz
CE
C
CE
(Continued)
=10mA
110
=10V
=10V
fe
ie
200
+ jb
+ jb
400MHz
10mA
fe
ie
25
20
15
10
5
250
60
-0.2
-0.4
-0.6
-0.8
-1.0
0.0
5
4
3
2
1
0
-0.2
0.0
24
20
16
12
8
4
0
0
f
f
at SG OUTPUT LEVEL
yoe=g
V
Figure 12. Conversion Gain
RF
Local
I
CE
C
=3mA
= 200 MHz, 80 dBuV/50ohm
=10V
= 258 MHz, 105 dBuV/50ohm
I
C
oe
=3mA
0.0
0.2
5mA
+ jb
Figure 10. yoe - f
Figure 8. yre - f
I
C
f=100MHz
f=100MHz
oe
[mA], COLLECTOR CURRENT
g
g
oe
re
[ms], CONDUCTANCE
[ms], CONDUCTANCE
200MHz
0.2
0.4
5
200MHz
300MHz
0.4
0.6
300MHz
yre=g
V
CE
=10V
10mA
0.6
0.8
re
+ jb
5mA
Rev. A2, September 2002
10mA
400MHz
10
400MHz
re
0.8
1.0