MT46H16M16LFBF-6:H Micron Technology Inc, MT46H16M16LFBF-6:H Datasheet - Page 60

• Manufacturer Part Number: MT46H16M16LFBF-6:H
• Description: DRAM Chip DDR SDRAM 256M-Bit 16Mx16 1.8V 60-Pin VFBGA Tray
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr
• Series: -r

Specifications of MT46H16M16LFBF-6:H

• Package: 60VFBGA
• Density: 256 Mb
• Address Bus Width: 15 Bit
• Operating Supply Voltage: 1.8 V
• Maximum Clock Rate: 166 MHz
• Maximum Random Access Time: 6.5|5 ns
• Operating Temperature: 0 to 70 °C
• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Package / Case: 60-VFBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Figure 23: Consecutive READ Bursts
PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. H 11/09 EN
Command
Command
Address
Address
DQS
DQS
CK#
CK#
DQ
DQ
CK
CK
Notes:
READ
Bank,
READ
Bank,
Col n
Col n
T0
T0
1. D
2. BL = 4, 8, or 16 (if 4, the bursts are concatenated; if 8 or 16, the second burst interrupts
3. Shown with nominal
4. Example applies only when READ commands are issued to same device.
the first).
OUT
n (or b) = data-out from column n (or column b).
CL = 2
NOP
NOP
T1
T1
CL = 3
T1n
D
OUT
t
READ
Bank,
READ
Bank,
Col b
Col b
AC,
T2
T2
1
60
t
DQSCK, and
D
T2n
T2n
OUT
256Mb: x16, x32 Mobile LPDDR SDRAM
D
D
OUT
Micron Technology, Inc. reserves the right to change products or specifications without notice.
NOP
NOP
T3
OUT
T3
t
DQSQ.
D
Don’t Care
D
T3n
T3n
OUT
OUT
D
D
T4
NOP
T4
NOP
OUT
OUT
D
T4n
T4n
D
OUT
OUT
Transitioning Data
©2008 Micron Technology, Inc. All rights reserved.
READ Operation
D
T5
NOP
T5
NOP
D
OUT
OUT
T5n
T5n
D
D
OUT
OUT