MT46H16M16LFBF-6:H Micron Technology Inc, MT46H16M16LFBF-6:H Datasheet - Page 64

• Manufacturer Part Number: MT46H16M16LFBF-6:H
• Description: DRAM Chip DDR SDRAM 256M-Bit 16Mx16 1.8V 60-Pin VFBGA Tray
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr
• Series: -r

Specifications of MT46H16M16LFBF-6:H

• Package: 60VFBGA
• Density: 256 Mb
• Address Bus Width: 15 Bit
• Operating Supply Voltage: 1.8 V
• Maximum Clock Rate: 166 MHz
• Maximum Random Access Time: 6.5|5 ns
• Operating Temperature: 0 to 70 °C
• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Package / Case: 60-VFBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Figure 27: READ-to-WRITE
PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. H 11/09 EN
Command
Command
Address
Address
DQ
DQ
DQS
DQS
CK#
CK#
DM
DM
CK
CK
3,4
3,4
Notes:
READ
Bank,
Col n
READ
Bank,
Col n
T0
T0
1. BL = 4 in the cases shown (applies for bursts of 8 and 16 as well; if BL = 2, the BST com-
2. BST = BURST TERMINATE command; page remains open.
3. D
4. D
5. Shown with nominal
6. CKE = HIGH.
1
1
mand shown can be NOP).
OUT
IN
b = data-in from column b.
n = data-out from column n.
CL = 2
BST
BST
T1
T1
2
2
CL = 3
T1n
D
t
AC,
OUT
NOP
T2
NOP
T2
t
64
DQSCK, and
D
T2n
T2n
OUT
256Mb: x16, x32 Mobile LPDDR SDRAM
D
OUT
Micron Technology, Inc. reserves the right to change products or specifications without notice.
WRITE
NOP
Bank,
Col b
T3
T3
t
DQSQ.
1
D
t
(NOM)
OUT
DQSS
T3n
T3n
Don’t Care
WRITE
Bank,
Col b
T4
D
T4
NOP
IN
1
t
(NOM)
DQSS
T4n
T4n
D
IN
Transitioning Data
©2008 Micron Technology, Inc. All rights reserved.
READ Operation
D
T5
D
T5
NOP
NOP
IN
IN
T5n
D
T5n
D
IN
IN