MT48LC16M16A2P-7E IT:D Micron Technology Inc, MT48LC16M16A2P-7E IT:D Datasheet - Page 33

DRAM Chip SDRAM 256M-Bit 16Mx16 3.3V 54-Pin TSOP-II Tray

MT48LC16M16A2P-7E IT:D

Manufacturer Part Number
MT48LC16M16A2P-7E IT:D
Description
DRAM Chip SDRAM 256M-Bit 16Mx16 3.3V 54-Pin TSOP-II Tray
Manufacturer
Micron Technology Inc
Type
SDRAMr

Specifications of MT48LC16M16A2P-7E IT:D

Density
256 Mb
Maximum Clock Rate
143 MHz
Package
54TSOP-II
Address Bus Width
15 Bit
Operating Supply Voltage
3.3 V
Maximum Random Access Time
5.4 ns
Operating Temperature
-40 to 85 °C
Format - Memory
RAM
Memory Type
SDRAM
Memory Size
256M (16Mx16)
Speed
133MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Package / Case
54-TSOP II
Organization
16Mx16
Address Bus
15b
Access Time (max)
5.4ns
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP-II
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
135mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
NO OPERATION (NOP)
LOAD MODE REGISTER (LMR)
ACTIVE
Figure 13: ACTIVE Command
PDF: 09005aef8091e6d1
256Mb_sdr.pdf - Rev. N 1/10 EN
The NO OPERATION (NOP) command is used to perform a NOP to the selected device
(CS# is LOW). This prevents unwanted commands from being registered during idle or
wait states. Operations already in progress are not affected.
The mode registers are loaded via inputs A[n:0] (where An is the most significant ad-
dress term), BA0, and BA1(see Mode Register (page 46)). The LOAD MODE REGISTER
command can only be issued when all banks are idle and a subsequent executable com-
mand cannot be issued until
The ACTIVE command is used to activate a row in a particular bank for a subsequent
access. The value on the BA0, BA1 inputs selects the bank, and the address provided
selects the row. This row remains active for accesses until a PRECHARGE command is
issued to that bank. A PRECHARGE command must be issued before opening a differ-
ent row in the same bank.
BA0, BA1
Address
RAS#
CAS#
WE#
CKE
CLK
CS#
HIGH
Bank address
Row address
t
33
MRD is met.
Don’t Care
Micron Technology, Inc. reserves the right to change products or specifications without notice.
256Mb: x4, x8, x16 SDRAM
© 1999 Micron Technology, Inc. All rights reserved.
Commands

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