BCR 116S H6327 Infineon Technologies, BCR 116S H6327 Datasheet - Page 4

• Manufacturer Part Number: BCR 116S H6327
• Description: TRANS NPN DGTL 50V 100MA SOT363
• Manufacturer: Infineon Technologies

Specifications of BCR 116S H6327

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 4.7K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Frequency - Transition: 150MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Details

DC current gain h
V
Input on Voltage V
V
CE
CE
10
10
10
10
10
10
10
= 5V (common emitter configuration)
= 0.3V (common emitter configuration)
V
-1
3
2
1
0
1
0
10
10
-4
-5
-40 °C
-25 °C
25 °C
85 °C
125 °C
10
-4
10
FE
-40 °C
-25 °C
25 °C
85 °C
125 °C
i (on)
-3
= ƒ (I
10
=
-3
ƒ
C
(I
)
C
10
)
-2
10
-2
A
I
I
C
C
A
10
10
-1
-1
4
Collector-emitter saturation voltage
V
Input off voltage V
V
CEsat
CE
10
0.35
0.25
0.15
0.05
10
10
0.5
0.4
0.3
0.2
0.1
= 5V (common emitter configuration)
V
V
-1
0
1
0
10
10
= ƒ (I
-3
-5
-40 °C
-25 °C
25 °C
85 °C
125 °C
C
), I
10
-40 °C
-25 °C
25 °C
85 °C
125 °C
C
/I
-4
B
i(off)
= 20
10
10
= ƒ (I
-3
-2
C
)
BCR116...
2011-08-19
10
A
-2
I C
I C
A
10
10
-1
-1