MJE340STU Fairchild Semiconductor, MJE340STU Datasheet

TRANSISTOR NPN 300V 500MA TO-126

MJE340STU

Manufacturer Part Number
MJE340STU
Description
TRANSISTOR NPN 300V 500MA TO-126
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of MJE340STU

Transistor Type
NPN
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
300V
Dc Current Gain (hfe) (min) @ Ic, Vce
30 @ 50mA, 10V
Power - Max
20W
Mounting Type
Through Hole
Package / Case
TO-126-3
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
300 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.5 A
Power Dissipation
20 W
Dc Collector/base Gain Hfe Min
30
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Frequency - Transition
-
Vce Saturation (max) @ Ib, Ic
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

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©2001 Fairchild Semiconductor Corporation
High Voltage General Purpose Applications
• High Collector-Emitter Breakdown Voltage
• Suitable for Transformer
• Complement to MJE350
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
V
I
P
T
V
V
T
BV
I
I
h
C
CBO
EBO
J
FE
EBO
C
STG
CBO
CEO
Symbol
Symbol
CEO
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation (T
Junction Temperature
Storage Temperature
Parameter
C
T
=25 C)
C
=25 C unless otherwise noted
Parameter
T
C
=25 C unless otherwise noted
MJE340
I
V
V
V
C
CB
BE
CE
= 1mA, I
= 3V, I
= 300V, I
= 10V, I
Test Condition
C
B
C
= 0
= 0
E
= 50mA
=0
1
1. Emitter
- 65 ~ 150
Value
300
300
500
150
2.Collector
20
5
Min.
300
30
TO-126
Max.
100
100
240
3.Base
Rev. A1, February 2001
Units
mA
W
V
V
V
Units
C
C
V
A
A

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MJE340STU Summary of contents

Page 1

... J T Storage Temperature STG Electrical Characteristics Symbol Parameter BV Collector-Emitter Breakdown Voltage CEO I Collector Cut-off Current CBO I Emitter Cut-off Current EBO h DC Current Gain FE ©2001 Fairchild Semiconductor Corporation MJE340 T =25 C unless otherwise noted C Parameter = =25 C unless otherwise noted C Test Condition I = 1mA 300V, I ...

Page 2

... Typical Characteristics 1000 100 [A], COLLECTOR CURRENT C Figure 1. DC current Gain 10 1 0.1 0. [V], COLLECTOR-EMITTER VOLTAGE CE Figure 3. Safe Operating Area ©2001 Fairchild Semiconductor Corporation 1 1.0 0.8 0.6 0.4 0.2 0.0 10 100 1000 Figure 2. Base-Emitter Saturation Voltage 100 I = 10I (sat (sat) CE 100 1000 ...

Page 3

... Package Demensions ø3.20 0.10 0.75 0.10 1.60 0.10 0.75 0.10 2.28TYP [2.28 0.20] ©2001 Fairchild Semiconductor Corporation TO-126 8.00 0.30 #1 2.28TYP [2.28 0.20] 3.25 0.20 (1.00) (0.50) 1.75 0.20 +0.10 0.50 –0.05 Dimensions in Millimeters Rev. A1, February 2001 ...

Page 4

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ CMOS™ EnSigna™ FACT™ FACT Quiet Series™ ...

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