MJE340STU Fairchild Semiconductor, MJE340STU Datasheet
Home Discrete Semiconductor Products Transistors (BJT) - Single MJE340STU
Manufacturer Part Number
MJE340STU
Description
TRANSISTOR NPN 300V 500MA TO-126
Manufacturer
Fairchild Semiconductor
Specifications of MJE340STU
Transistor Type
NPN
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
300V
Dc Current Gain (hfe) (min) @ Ic, Vce
30 @ 50mA, 10V
Power - Max
20W
Mounting Type
Through Hole
Package / Case
TO-126-3
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
300 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.5 A
Power Dissipation
20 W
Dc Collector/base Gain Hfe Min
30
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Frequency - Transition
-
Vce Saturation (max) @ Ib, Ic
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Manufacturer:
Fairchild Semiconductor
Manufacturer:
ON/安森美
©2001 Fairchild Semiconductor Corporation
High Voltage General Purpose Applications
• High Collector-Emitter Breakdown Voltage
• Suitable for Transformer
• Complement to MJE350
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
V
I
P
T
V
V
T
BV
I
I
h
C
CBO
EBO
J
FE
EBO
C
STG
CBO
CEO
Symbol
Symbol
CEO
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation (T
Junction Temperature
Storage Temperature
Parameter
C
T
=25 C)
C
=25 C unless otherwise noted
Parameter
T
C
=25 C unless otherwise noted
MJE340
I
V
V
V
C
CB
BE
CE
= 1mA, I
= 3V, I
= 300V, I
= 10V, I
Test Condition
C
B
C
= 0
= 0
E
= 50mA
=0
1
1. Emitter
- 65 ~ 150
Value
300
300
500
150
2.Collector
20
5
Min.
300
30
TO-126
Max.
100
100
240
3.Base
Rev. A1, February 2001
Units
mA
W
V
V
V
Units
C
C
V
A
A
Related parts for MJE340STU
MJE340STU Summary of contents
... J T Storage Temperature STG Electrical Characteristics Symbol Parameter BV Collector-Emitter Breakdown Voltage CEO I Collector Cut-off Current CBO I Emitter Cut-off Current EBO h DC Current Gain FE ©2001 Fairchild Semiconductor Corporation MJE340 T =25 C unless otherwise noted C Parameter = =25 C unless otherwise noted C Test Condition I = 1mA 300V, I ...
... Typical Characteristics 1000 100 [A], COLLECTOR CURRENT C Figure 1. DC current Gain 10 1 0.1 0. [V], COLLECTOR-EMITTER VOLTAGE CE Figure 3. Safe Operating Area ©2001 Fairchild Semiconductor Corporation 1 1.0 0.8 0.6 0.4 0.2 0.0 10 100 1000 Figure 2. Base-Emitter Saturation Voltage 100 I = 10I (sat (sat) CE 100 1000 ...
... Package Demensions ø3.20 0.10 0.75 0.10 1.60 0.10 0.75 0.10 2.28TYP [2.28 0.20] ©2001 Fairchild Semiconductor Corporation TO-126 8.00 0.30 #1 2.28TYP [2.28 0.20] 3.25 0.20 (1.00) (0.50) 1.75 0.20 +0.10 0.50 –0.05 Dimensions in Millimeters Rev. A1, February 2001 ...
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ CMOS™ EnSigna™ FACT™ FACT Quiet Series™ ...
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