FJE3303H1TU Fairchild Semiconductor, FJE3303H1TU Datasheet - Page 4

• Manufacturer Part Number: FJE3303H1TU
• Description: TRANSISTOR PWR NPN FAST HV TO126
• Manufacturer: Fairchild Semiconductor

Specifications of FJE3303H1TU

• Transistor Type: NPN
• Current - Collector (ic) (max): 1.5A
• Voltage - Collector Emitter Breakdown (max): 400V
• Vce Saturation (max) @ Ib, Ic: 3V @ 500mA, 1.5A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 8 @ 500mA, 2V
• Power - Max: 20W
• Frequency - Transition: 4MHz
• Mounting Type: Through Hole
• Package / Case: TO-126-3
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 400 V
• Emitter- Base Voltage Vebo: 9 V
• Maximum Dc Collector Current: 1.5 A
• Power Dissipation: 20 W
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 8
• Maximum Operating Frequency: 4 MHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Details

FJE3303 Rev. B
Typical Performance Characteristics
Figure 7. Forward Biased Safe Operating Area
30
25
20
15
10
0.01
5
0
0.1
10
0
1
1
I
I
C
C
T
Single Pulse
(Pulse)
(DC)
C
Figure 9. Power Derating
= 25
25
V
CE
o
C
[V], COLLECTOR-EMITTER VOLTAGE
T
a
50
[
o
C], AMBIENT TEMPERATURE
10
5ms
75
1ms
100
100
125
100 s
150
1000
175
(Continued)
4
Figure 8. Reverse Biased Safe Operating Area
0.1
10
1
100
I
V
B1
CC
= 1A, R
= 50V, L =1 mH
V
CE
B2
[V], COLLECTOR-EMITTER VOLTAGE
= 0
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1000