KSC1845PTA Fairchild Semiconductor, KSC1845PTA Datasheet

TRANSISTOR NPN 120V 50MA TO-92

KSC1845PTA

Manufacturer Part Number
KSC1845PTA
Description
TRANSISTOR NPN 120V 50MA TO-92
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of KSC1845PTA

Transistor Type
NPN
Current - Collector (ic) (max)
50mA
Voltage - Collector Emitter Breakdown (max)
120V
Vce Saturation (max) @ Ib, Ic
300mV @ 1mA, 10mA
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 1mA, 6V
Power - Max
500mW
Frequency - Transition
110MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
120 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
0.05 A
Maximum Dc Collector Current
0.05 A
Power Dissipation
0.5 W
Maximum Operating Frequency
110 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
200
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
©2002 Fairchild Semiconductor Corporation
Audio Frequency Low Noise Amplifier
• Complement to KSA992
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
h
V
V
V
I
I
P
T
T
I
I
h
h
V
V
f
C
NL
C
B
CBO
EBO
T
FE
Symbol
FE1
FE2
J
STG
CBO
CEO
EBO
C
BE
BE
ob
Symbol
(on)
(sat)
Classification
Classification
h
FE2
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Base-Emitter On Voltage
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Level
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
200 ~ 400
P
T
a
=25 C unless otherwise noted
T
Parameter
a
=25 C unless otherwise noted
KSC1845
V
V
V
V
V
I
V
V
C
CB
EB
CE
CE
CE
CE
CB
=10mA, I
300 ~ 600
=5V, I
=120V, I
=6V, I
=6V, I
=6V, I
=6V, I
=30V, I
Test Condition
F
C
C
C
C
C
=0
B
E
=0.1mA
=1mA
=1mA
=1mA
=1mA
=0, f=1MHz
E
=0
400 ~ 800
1. Emitter 2. Collector 3. Base
1
Min.
0.55
150
200
50
E
-55 ~ 150
Value
120
120
500
150
50
10
5
Typ.
0.59
0.07
580
600
110
1.6
25
TO-92
600 ~ 1200
Max.
1200
0.65
0.3
2.5
50
50
40
Rev. B2, November 2002
U
Units
mW
mA
mA
V
V
V
C
C
Units
MHz
mV
nA
nA
pF
V
V

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KSC1845PTA Summary of contents

Page 1

... V (on) Base-Emitter On Voltage BE V (sat) Collector-Emitter Saturation Voltage BE f Current Gain Bandwidth Product T C Output Capacitance ob NL Noise Level h Classification FE Classification h FE2 ©2002 Fairchild Semiconductor Corporation KSC1845 T =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition V =120V =5V =6V, I =0.1mA ...

Page 2

... V [V], COLLECTOR-EMITTER VOLTAGE CE Figure 1. Static Characteristic 1000 900 800 700 600 500 400 300 200 100 0 0.01 0 [mA], COLLECTOR CURRENT C Figure 3. DC current Gain [V], COLLECTOR-BASE VOLTAGE CB Figure 5. Collector Output Capacitance ©2002 Fairchild Semiconductor Corporation 1 0 0.0 ...

Page 3

... Typical Characteristics 100 10 1 0.1 0.01 0.4 0.5 0.6 0.7 V [V], BASE-EMITTER VOLTAGE BE Figure 7. Collector Current vs. Base-Emitter Voltage ©2002 Fairchild Semiconductor Corporation (Continued) 800 700 Pulse Test 600 500 400 300 200 100 0 0.8 0 Figure 8. Power Derating 50 75 100 125 150 ...

Page 4

... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2002 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. B2, November 2002 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...

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