KSC1845PTA Fairchild Semiconductor, KSC1845PTA Datasheet
Home Discrete Semiconductor Products Transistors (BJT) - Single KSC1845PTA
Manufacturer Part Number
KSC1845PTA
Description
TRANSISTOR NPN 120V 50MA TO-92
Manufacturer
Fairchild Semiconductor
Specifications of KSC1845PTA
Transistor Type
NPN
Current - Collector (ic) (max)
50mA
Voltage - Collector Emitter Breakdown (max)
120V
Vce Saturation (max) @ Ib, Ic
300mV @ 1mA, 10mA
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 1mA, 6V
Power - Max
500mW
Frequency - Transition
110MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
120 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
0.05 A
Maximum Dc Collector Current
0.05 A
Power Dissipation
0.5 W
Maximum Operating Frequency
110 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
200
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
©2002 Fairchild Semiconductor Corporation
Audio Frequency Low Noise Amplifier
• Complement to KSA992
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
h
V
V
V
I
I
P
T
T
I
I
h
h
V
V
f
C
NL
C
B
CBO
EBO
T
FE
Symbol
FE1
FE2
J
STG
CBO
CEO
EBO
C
BE
BE
ob
Symbol
(on)
(sat)
Classification
Classification
h
FE2
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Base-Emitter On Voltage
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Level
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
200 ~ 400
P
T
a
=25 C unless otherwise noted
T
Parameter
a
=25 C unless otherwise noted
KSC1845
V
V
V
V
V
I
V
V
C
CB
EB
CE
CE
CE
CE
CB
=10mA, I
300 ~ 600
=5V, I
=120V, I
=6V, I
=6V, I
=6V, I
=6V, I
=30V, I
Test Condition
F
C
C
C
C
C
=0
B
E
=0.1mA
=1mA
=1mA
=1mA
=1mA
=0, f=1MHz
E
=0
400 ~ 800
1. Emitter 2. Collector 3. Base
1
Min.
0.55
150
200
50
E
-55 ~ 150
Value
120
120
500
150
50
10
5
Typ.
0.59
0.07
580
600
110
1.6
25
TO-92
600 ~ 1200
Max.
1200
0.65
0.3
2.5
50
50
40
Rev. B2, November 2002
U
Units
mW
mA
mA
V
V
V
C
C
Units
MHz
mV
nA
nA
pF
V
V
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KSC1845PTA Summary of contents
... V (on) Base-Emitter On Voltage BE V (sat) Collector-Emitter Saturation Voltage BE f Current Gain Bandwidth Product T C Output Capacitance ob NL Noise Level h Classification FE Classification h FE2 ©2002 Fairchild Semiconductor Corporation KSC1845 T =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition V =120V =5V =6V, I =0.1mA ...
... V [V], COLLECTOR-EMITTER VOLTAGE CE Figure 1. Static Characteristic 1000 900 800 700 600 500 400 300 200 100 0 0.01 0 [mA], COLLECTOR CURRENT C Figure 3. DC current Gain [V], COLLECTOR-BASE VOLTAGE CB Figure 5. Collector Output Capacitance ©2002 Fairchild Semiconductor Corporation 1 0 0.0 ...
... Typical Characteristics 100 10 1 0.1 0.01 0.4 0.5 0.6 0.7 V [V], BASE-EMITTER VOLTAGE BE Figure 7. Collector Current vs. Base-Emitter Voltage ©2002 Fairchild Semiconductor Corporation (Continued) 800 700 Pulse Test 600 500 400 300 200 100 0 0.8 0 Figure 8. Power Derating 50 75 100 125 150 ...
... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2002 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. B2, November 2002 ...
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...
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