KST5551MTF Fairchild Semiconductor, KST5551MTF Datasheet
KST5551MTF
Manufacturer Part Number
KST5551MTF
Description
TRANSISTOR NPN 160V 600MA SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet
1.KST5551MTF.pdf
(3 pages)
Specifications of KST5551MTF
Transistor Type
NPN
Current - Collector (ic) (max)
600mA
Voltage - Collector Emitter Breakdown (max)
160V
Vce Saturation (max) @ Ib, Ic
200mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 10mA, 5V
Power - Max
350mW
Frequency - Transition
300MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
160 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
0.6 A
Maximum Dc Collector Current
0.6 A
Power Dissipation
350 mW
Maximum Operating Frequency
300 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
80
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
KST5551MTF
Manufacturer:
ON/安森美
Quantity:
20 000
©2003 Fairchild Semiconductor Corporation
Amplifier Transistor
• Collector-Emitter Voltage: V
• Collector Power Dissipation: P
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
* Pulse Test: Pulse Width=300 s, Duty Cycle=2%
Refer to 2N5551 for graphs
V
V
V
I
P
T
T
BV
BV
BV
I
I
h
V
V
f
C
NF
C
CBO
EBO
T
Symbol
FE
J
STG
CBO
CEO
EBO
C
CE
BE
ob
CBO
CEO
EBO
Symbol
(sat)
(sat)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
CEO
Parameter
C
=160V
(max)=350mW
T
a
=25 C unless otherwise noted
T
Parameter
a
=25 C unless otherwise noted
KST5551
I
I
V
I
V
I
V
V
V
V
I
I
I
f=100MHz
V
V
f=10Hz to 15.7KMz
C
C
E
C
C
C
C
CB
EB
CE
CE
CE
CE
CB
CE
=10 A, I
=100 A, I
=1mA, I
=10mA, I
=50mA, I
=10mA, I
=50mA, I
=4V, I
=120V, I
=5V, I
=5V, I
=5V, I
=10V, I
=10V, I
=5V, I
Test Condition
C
B
C
C
C
C
C
=0
=0
=1mA
=10mA
=50mA
B
B
B
B
C
E
=250 A, R
E
=0
E
=1mA
=5mA
=1mA
=5mA
=10mA,
=0, f=1MHz
=0
=0
S
=1K ,
1. Base 2. Emitter 3. Collector
-55 ~ 150
3
Value
180
160
600
350
150
6
Min.
180
160
100
80
80
30
6
1
SOT-23
Mark: G1
Max.
0.15
250
300
0.2
50
50
1
1
6
8
Rev. B2, February 2003
2
Units
mW
mA
V
V
V
C
C
Units
MHz
nA
nA
dB
pF
V
V
V
V
V
V
V
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KST5551MTF Summary of contents
Page 1
... Collector-Emitter Saturation Voltage CE V (sat) Base-Emitter Saturation Voltage BE f Current Gain Bandwidth Product T C Output Capacitance ob NF Noise Figure * Pulse Test: Pulse Width=300 s, Duty Cycle=2% ©2003 Fairchild Semiconductor Corporation KST5551 T =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition I =100 ...
Page 2
... Package Dimensions 0.40 0.03 2.90 0.95 0.03 1.90 ©2003 Fairchild Semiconductor Corporation SOT-23 0.40 0.03 0.96~1.14 0.10 0.95 0.03 0.508REF 0.03 0.03~0.10 0.38 REF +0.05 0.12 –0.023 Dimensions in Millimeters Rev. B2, February 2003 ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...