KSB564ACYTA Fairchild Semiconductor, KSB564ACYTA Datasheet

TRANSISTOR PNP 25V 1A TO-92

KSB564ACYTA

Manufacturer Part Number
KSB564ACYTA
Description
TRANSISTOR PNP 25V 1A TO-92
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of KSB564ACYTA

Transistor Type
PNP
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
25V
Vce Saturation (max) @ Ib, Ic
500mV @ 100mA, 1A
Dc Current Gain (hfe) (min) @ Ic, Vce
120 @ 100mA, 1V
Power - Max
800mW
Frequency - Transition
110MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
©2001 Fairchild Semiconductor Corporation
Audio Frequency Power Amplifier
• Complement to KSD471A
• Collector Current : I
• Collector Power Dissipation : P
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
h
V
V
V
I
P
T
T
BV
BV
BV
I
h
V
V
f
C
C
CBO
T
FE
Symbol
J
STG
FE
CBO
CEO
EBO
C
CE
BE
ob
CBO
CEO
EBO
Symbol
(sat)
(sat)
Classification
Classification
h
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
FE
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
C
= -1A
Parameter
C
= 800mW
T
70 ~ 140
a
=25 C unless otherwise noted
O
T
Parameter
a
=25 C unless otherwise noted
KSB564A
I
I
I
V
V
I
I
V
V
C
C
E
C
C
CB
CE
CE
CB
= -100 A, I
= -10mA, I
= -100 A, I
= -1A, I
= -1A, I
= -30V, I
= -1V, I
= -6V, I
= -6V, I
Test Condition
B
B
= -0.1A
= -0.1A
C
C
E
B
E
= -100mA
= -10mA
=0, f=1MHz
E
C
=0
=0
=0
=0
120 ~ 240
Y
1. Emitter 2. Base 3. Collector
Min.
1
-30
-25
70
-5
-55 ~ 150
Ratings
-1.0
800
150
-30
-25
-5
Typ.
110
18
TO-92
200 ~ 400
Max.
-0.1
400
-0.5
-1.2
G
Units
mW
Rev. A1, June 2001
V
V
V
A
C
C
Units
MHz
pF
V
V
V
V
V
A

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KSB564ACYTA Summary of contents

Page 1

... FE V (sat) Collector-Emitter Saturation Voltage CE V (sat) Base-Emitter Saturation Voltage BE f Current Gain Bandwidth Product T C Output Capacitance ob h Classification FE Classification h FE ©2001 Fairchild Semiconductor Corporation KSB564A T =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition I = -100 -10mA -100 A, I ...

Page 2

... COLLECTOR-EMITTER VOLTAGE CE Figure 1. Static Characteristic -10 V (sat -0.1 V (sat) CE -0.01 -1 -10 I [mA], COLLECTOR CURRENT C Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 100 [mA], COLLECTOR CURRENT C Figure 5. Current Gain Bandwidth Product ©2001 Fairchild Semiconductor Corporation 1000 100 I = -4mA -3mA -2mA -1mA -10 100 ...

Page 3

... Package Demensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2001 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A1, June 2001 ...

Page 4

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. A CEx™ FAST FASTr™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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