MPSA20_D26Z Fairchild Semiconductor, MPSA20_D26Z Datasheet
MPSA20_D26Z
Manufacturer Part Number
MPSA20_D26Z
Description
TRANS GP NPN TO-92
Manufacturer
Fairchild Semiconductor
Datasheet
1.MPSA20_D26Z.pdf
(3 pages)
Specifications of MPSA20_D26Z
Transistor Type
NPN
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
250mV @ 1mA, 10mA
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 5mA, 10V
Power - Max
625mW
Frequency - Transition
125MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
©2002 Fairchild Semiconductor Corporation
NPN General Purpose Amplifier
• Sourced from process 10
Absolute Maximum Ratings*
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
Thermal Characteristics
* Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm: mounting pad for the collector lead min. 6cm.
V
V
I
T
Off Characteristics
V
V
I
On Characteristics
h
V
Small Signal Characteristics
f
C
P
R
R
C
CBO
T
FE
J
CEO
EBO
(BR)CEO
(BR)EBO
CE(sat)
D
ob
θJC
θJA
Symbol
Symbol
, T
Symbol
stg
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Collector-Emitter Voltage
Emitter-Base Voltage
Collector current
Operating and Storage Junction Temperature
Parameter
T
A
T
=25°C unless otherwise noted
A
=25°C unless otherwise noted
Parameter
Parameter
T
A
=25°C unless otherwise noted
MPSA20
- Continuous
I
I
V
I
I
I
f = 100MHz
V
f=100KHZ
C
C
C
C
C
CB
CB
= 1mA, I
= 100µA, I
= 5mA, V
= 10mA, I
= 5mA, V
= 30V, I
= 10V, I
Test Condition
B
CE
CE
E
B
E
= 0
C
= 0
= 1mA
= 0,
1. Emitter 2. Base 3. Collector
= 0
= 10V
= 10V,
1
TO-92
Min.
125
-55 ~ +150
40
40
4
Value
100
40
Value
4
625
125
200
5.0
Typ.
Max.
0.25
100
400
4.0
mW/°C
Units
°C/W
°C/W
Units
mW
Rev. A, Oct 2005
mA
°C
V
V
Units
MHz
nA
pF
V
V
V
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MPSA20_D26Z Summary of contents
Page 1
... Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA * Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm: mounting pad for the collector lead min. 6cm. ©2002 Fairchild Semiconductor Corporation MPSA20 1 1. Emitter 2. Base 3. Collector T =25°C unless otherwise noted ...
Page 2
... Package Dimensions ±0.10 0.46 1.27TYP ±0.20 [1.27 ] ©2002 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP ±0.20 [1.27 ] ±0.20 3.60 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A, Oct 2005 ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. FAST ® ACEx™ ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ ...