MPSA20 Fairchild Semiconductor, MPSA20 Datasheet

MPSA20

Manufacturer Part Number

MPSA20

Description

TRANSISTOR NPN GEN PURP TO-92

Manufacturer

Fairchild Semiconductor

Datasheet

1.MPSA20.pdf (2 pages)

Specifications of MPSA20

Transistor Type

NPN

Current - Collector (ic) (max)

100mA

Voltage - Collector Emitter Breakdown (max)

40V

Vce Saturation (max) @ Ib, Ic

250mV @ 1mA, 10mA

Dc Current Gain (hfe) (min) @ Ic, Vce

40 @ 5mA, 10V

Power - Max

625mW

Frequency - Transition

125MHz

Mounting Type

Through Hole

Package / Case

TO-92-3 (Standard Body), TO-226

Configuration

Single

Transistor Polarity

NPN

Mounting Style

Through Hole

Collector- Emitter Voltage Vceo Max

40 V

Emitter- Base Voltage Vebo

4 V

Continuous Collector Current

0.2 A

Maximum Dc Collector Current

0.1 A

Power Dissipation

625 mW

Maximum Operating Frequency

125 MHz

Maximum Operating Temperature

+ 150 C

Dc Collector/base Gain Hfe Min

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - Collector Cutoff (max)

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Other names

MPSA20FS

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MPSA20

Manufacturer:

FSC

Quantity:

2 000

Current page: 1 of 2
Download datasheet (93Kb)

MPSA20 Rev. 1.0.0

MPSA20

NPN General Purpose Amplifier

Features

• BVceo .....40V(Min)

• hFE ...... 40~400 @ Vce=10V, Ic=5mA

• Pb free

• Sourced from process 10

Absolute Maximum Ratings

* 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics*

* 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics*

* DC Item are tested by Pulse Test : Pulse Width≤300us, Duty Cycle≤2%

3. These ratings are based on a maximum junction temperature of 150 degrees C.

4. Device mounted on FR-4 PCB 36mm * 1.5mm: Mounting pad for the collector lead min.6cm.

CBO

STG

CEO

EBO

Symbol

θJ

θJA

Symbol

CEO

EBO

(on)

(sat)

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Junction Temperature

Storage Temperature Range

Collector Power Dissipation, by R

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

Output Capacitance

Current Gain Bandwithd Product

Parameter

=25°C unless otherwise noted

= 25°C unless otherwise noted

θJA

= 100μA, I

= 1mA, I

= 10mA, I

= 30V

= 10V, I

= -10V, I

= 10V, f = 100kHz

Test Condition

= 0

= 5mA, f = 100MHz

= 1mA

= 5mA

= 0

= -10mA

-55 ~ 150

Value

Max

100

150

625

125

200

Min.

-0.5

125

Max.

0.25

-1.2

100

400

4.0

February 2009

www.fairchildsemi.com

Unit

°C/W

°C

Unit

Mhz

Related parts for MPSA20

MPSA20 Summary of contents

Page 1

... BE C Output Capacitance cb f Current Gain Bandwithd Product Item are tested by Pulse Test : Pulse Width≤300us, Duty Cycle≤2% © 2007 Fairchild Semiconductor Corporation MPSA20 Rev. 1.0 25°C unless otherwise noted a T =25°C unless otherwise noted a θJA T =25°C unless otherwise noted ...

Page 2

... Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production © 2007 Fairchild Semiconductor Corporation MPSA20 Rev. 1.0.0 Green FPS™ Power247 Green FPS™ e-Series™ POWEREDGE GTO™ Power-SPM™ i-Lo™ PowerTrench IntelliMAX™ ...

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