BUT11A Fairchild Semiconductor, BUT11A Datasheet
BUT11A
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BUT11A Summary of contents
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... C unless otherwise noted C Parameter : BUT11 : BUT11A : BUT11 : BUT11A = =25 C unless otherwise noted C Test Condition : BUT11 I = 100mA BUT11A : BUT11 V = 850V BUT11A BUT11 BUT11A I = 2.5A 0. BUT11 BUT11A I = 2.5A 0. 250V 2. 0. 100 L T =25 C unless otherwise noted C Parameter TO-220 1 1.Base 2 ...
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... Figure 2. Collector-Emitter Saturation Voltage 200 Figure 4. Reverse Biased Safe OPerating Area 120 100 BUT11A BUT11 100 1000 (sat [A], COLLECTOR CURRENT C BUT11A BUT11 400 600 800 1000 1200 V [V], COLLECTOR-EMITTER VOLTAGE 100 125 150 175 C], CASE TEMPERATURE C Figure 6. Power Derating Rev. B1, August 2001 ...
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... Package Demensions 1.27 2.54TYP [2.54 ©2001 Fairchild Semiconductor Corporation TO-220 9.90 0.20 (8.70) ø3.60 0.10 1.52 0.10 0.10 0.80 0.10 2.54TYP ] [2.54 ] 0.20 0.20 10.00 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 0.20 –0.05 Dimensions in Millimeters Rev. B1, August 2001 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. A CEx™ FAST FASTr™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...