PBSS3515E,115 NXP Semiconductors, PBSS3515E,115 Datasheet - Page 3

• Manufacturer Part Number: PBSS3515E,115
• Description: TRANS NPN 15V 0.5A SOT416
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PBSS3515E,115

• Package / Case: EMT3 (SOT-416, SC-75-3)
• Mounting Type: Surface Mount
• Power - Max: 250mW
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 15V
• Transistor Type: PNP
• Frequency - Transition: 280MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 150 @ 100mA, 2V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 50mA, 500mA
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 280 MHz
• Maximum Operating Temperature: + 150 C
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934059167115::PBSS3515E T/R::PBSS3515E T/R

NXP Semiconductors
6. Thermal characteristics
PBSS3515E_2
Product data sheet
Table 6.
[1]
[2]
Symbol
R
R
Fig 1.
th(j-a)
th(j-sp)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
(1) FR4 PCB, mounting pad for collector 1 cm
(2) FR4 PCB, standard footprint
Power derating curves
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Thermal characteristics
(mW)
P
tot
300
200
100
Rev. 02 — 27 April 2009
0
0
40
(1)
(2)
Conditions
in free air
15 V, 0.5 A PNP low V
2
80
120
T
amb
006aaa412
[1]
[2]
( C)
Min
-
-
-
160
PBSS3515E
CEsat
Typ
-
-
-
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
Max
833
500
175
2
.
Unit
K/W
K/W
K/W
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