PBSS3515E,115 NXP Semiconductors, PBSS3515E,115 Datasheet - Page 9

• Manufacturer Part Number: PBSS3515E,115
• Description: TRANS NPN 15V 0.5A SOT416
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PBSS3515E,115

• Package / Case: EMT3 (SOT-416, SC-75-3)
• Mounting Type: Surface Mount
• Power - Max: 250mW
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 15V
• Transistor Type: PNP
• Frequency - Transition: 280MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 150 @ 100mA, 2V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 50mA, 500mA
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 280 MHz
• Maximum Operating Temperature: + 150 C
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934059167115::PBSS3515E T/R::PBSS3515E T/R

NXP Semiconductors
9. Package outline
10. Packing information
11. Soldering
PBSS3515E_2
Product data sheet
Table 8.
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number Package Description
PBSS3515E
Fig 14. Package outline SOT416 (SC-75)
Fig 15. Reflow soldering footprint SOT416 (SC-75)
For further information and the availability of packing methods, see
0.85
Packing methods
SOT416
(3 )
0.6
1.75
1.45
Dimensions in mm
Rev. 02 — 27 April 2009
0.9
0.7
4 mm pitch, 8 mm tape and reel
2.2
1.3
1.7
1
1.8
1.4
1
3
(3 )
15 V, 0.5 A PNP low V
0.5
1
2
0.30
0.15
2
0.45
0.15
Section
Dimensions in mm
0.95
0.60
0.25
0.10
[1]
PBSS3515E
04-11-04
14.
CEsat
solder lands
solder resist
solder paste
occupied area
Packing quantity
3000
-115
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
sot416_fr
10000
-135
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