PBSS3515E,115 NXP Semiconductors, PBSS3515E,115 Datasheet - Page 5

• Manufacturer Part Number: PBSS3515E,115
• Description: TRANS NPN 15V 0.5A SOT416
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PBSS3515E,115

• Package / Case: EMT3 (SOT-416, SC-75-3)
• Mounting Type: Surface Mount
• Power - Max: 250mW
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 15V
• Transistor Type: PNP
• Frequency - Transition: 280MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 150 @ 100mA, 2V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 50mA, 500mA
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 280 MHz
• Maximum Operating Temperature: + 150 C
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934059167115::PBSS3515E T/R::PBSS3515E T/R

NXP Semiconductors
7. Characteristics
PBSS3515E_2
Product data sheet
Table 7.
T
[1]
Symbol
I
I
h
V
R
V
V
t
t
t
t
t
t
f
C
CBO
EBO
d
r
on
s
f
off
T
amb
FE
CEsat
BEsat
BEon
CEsat
c
Pulse test: t
= 25 C unless otherwise specified.
Characteristics
Parameter
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
collector-emitter
saturation resistance
base-emitter
saturation voltage
base-emitter turn-on
voltage
delay time
rise time
turn-on time
storage time
fall time
turn-off time
transition frequency
collector capacitance
p
300 s;
Rev. 02 — 27 April 2009
0.02.
Conditions
V
V
T
V
V
V
V
I
I
I
I
I
I
I
I
I
I
V
V
I
I
I
V
I
f = 100 MHz
V
f = 1 MHz
C
B
C
B
C
B
C
B
C
B
C
Bon
Boff
C
j
CB
CB
EB
CE
CE
CE
CE
CC
CE
CB
= 150 C
= 0.5 mA
= 10 mA
= 50 mA
= 50 mA
= 50 mA
= 10 mA;
= 200 mA;
= 500 mA;
= 500 mA;
= 500 mA;
= 250 mA;
= 100 mA;
= 12.5 mA;
= 12.5 mA
= 5 V; I
= 15 V; I
= 15 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 11 V;
= 5 V;
= 10 V; I
15 V, 0.5 A PNP low V
C
C
C
C
C
E
E
E
= 0 A
= 10 mA
= 100 mA
= 500 mA
= 100 mA
= i
= 0 A
= 0 A;
e
= 0 A;
[1]
[1]
[1]
[1]
[1]
[1]
Min
-
-
-
200
150
90
-
-
-
-
-
-
-
-
-
-
-
-
100
-
PBSS3515E
CEsat
Typ
-
-
-
-
-
-
-
-
-
300
-
-
10
22
32
125
37
162
280
-
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
Max
-
-
-
500
-
-
-
-
-
-
-
10
100
50
100
25
150
250
1.1
0.9
Unit
nA
nA
mV
mV
mV
m
V
V
ns
ns
ns
ns
ns
ns
MHz
pF
5 of 12
A