PBSS3515E,115 NXP Semiconductors, PBSS3515E,115 Datasheet - Page 8

• Manufacturer Part Number: PBSS3515E,115
• Description: TRANS NPN 15V 0.5A SOT416
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PBSS3515E,115

• Package / Case: EMT3 (SOT-416, SC-75-3)
• Mounting Type: Surface Mount
• Power - Max: 250mW
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 15V
• Transistor Type: PNP
• Frequency - Transition: 280MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 150 @ 100mA, 2V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 50mA, 500mA
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 280 MHz
• Maximum Operating Temperature: + 150 C
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934059167115::PBSS3515E T/R::PBSS3515E T/R

NXP Semiconductors
8. Test information
PBSS3515E_2
Product data sheet
Fig 12. BISS transistor switching time definition
Fig 13. Test circuit for switching times
90 %
10 %
90 %
10 %
I
I
B
C
V
CC
= 11 V; I
oscilloscope
t
d
t
on
C
= 250 mA; I
V
Rev. 02 — 27 April 2009
t
I
r
(probe)
450
Bon
R1
= 12.5 mA; I
R2
R
B
V
BB
15 V, 0.5 A PNP low V
Boff
R
C
V
CC
= 12.5 mA
DUT
V
o
mgd624
(probe)
I
450
Bon
t
s
I
(100 %)
Boff
t
off
oscilloscope
PBSS3515E
CEsat
input pulse
(idealized waveform)
output pulse
(idealized waveform)
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
t
f
I
006aaa266
C
(100 %)
t
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