BC 856BW H6327 Infineon Technologies, BC 856BW H6327 Datasheet - Page 3
BC 856BW H6327
Manufacturer Part Number
BC 856BW H6327
Description
TRANS AF PNP 65V 100MA SOT323
Manufacturer
Infineon Technologies
Datasheet
1.BC857CE6327.pdf
(14 pages)
Specifications of BC 856BW H6327
Transistor Type
PNP
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
65V
Vce Saturation (max) @ Ib, Ic
650mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
220 @ 2mA, 5V
Power - Max
250mW
Frequency - Transition
250MHz
Mounting Type
Surface Mount
Package / Case
SOT-323
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Maximum Ratings
Parameter
Collector-emitter voltage
BC856...
BC857..., BC860...
BC858..., BC859...
Collector-base voltage
BC856...
BC857..., BC860...
BC858..., BC859...
Emitter-base voltage
Collector current
Peak collector current, t
Total power dissipation
T
T
T
T
Junction temperature
Storage temperature
1
Thermal Resistance
Parameter
Junction - soldering point
BC856-BC860
BC857BF-BC858BF
BC857BL3, BC858BL3
BC856W-BC860W
For calculation of R
S
S
S
S
≤ 71 °C, BC856-BC860
≤ 128 °C, BC857BF-BC858BF
≤ 135 °C, BC857BL3, BC860BL3
≤ 124 °C, BC856W-BC860W
thJA
please refer to Application Note Thermal Resistance
p
≤ 10 ms
1)
3
Symbol
V
V
V
I
I
P
T
T
Symbol
R
C
CM
j
stg
CEO
CBO
EBO
tot
thJS
-65 ... 150
Value
BC856...-BC860...
Value
≤ 240
≤ 105
≤ 90
≤ 60
330
250
250
250
100
200
150
65
45
30
80
50
30
5
2008-04-29
Unit
V
mA
mW
°C
Unit
K/W