BCV 47 E6433 Infineon Technologies, BCV 47 E6433 Datasheet - Page 5

• Manufacturer Part Number: BCV 47 E6433
• Description: TRANSISTOR DARL NPN AF SOT-23
• Manufacturer: Infineon Technologies

Specifications of BCV 47 E6433

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 1V @ 100µA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10000 @ 100mA, 5V
• Power - Max: 360mW
• Frequency - Transition: 170MHz
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 10 V
• Collector- Base Voltage Vcbo: 80 V
• Maximum Dc Collector Current: 0.5 A
• Maximum Collector Cut-off Current: 0.1 uA
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 2000
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BCV47E6433XT; SP000010864

DC current gain h
V
Base-emitter saturation voltage
I
h
C
C
FE
CE
=
mA
10
10
10
10
10
10
10
10
5
5
= 5 V
5
5
5
10
3
2
1
0
6
5
4
3
(V
0
BCV 27/47
BCV 27/47
-1
BEsat
), h
10
0
125
FE
-55 ˚C
1.0
25 ˚C
FE
˚C
= 10
=
10
(I
1
C
)
150
2.0
-50 ˚C
25 ˚C
10
˚C
V
2
BEsat
EHP00304
V
EHP00307
C
mA
10
3.0
3
5
Collector-emitter saturation voltage
I
Collector cutoff current I
V
C
CBO
C
CB
= (V
mA
10
10
10
10
nA
10
10
10
10
10
5
5
= V
3
2
1
0
4
3
2
1
0
0
BCV 27/47
0
CEsat
BCV 27/47
CEmax
), h
FE
0.5
50
= 10
max
BCV27, BCV47
CBO
typ
100
1.0
=
2007-04-20
150
V
-50 ˚C
T
25 ˚C
(T
˚C
A
CEsat
EHP00305
V
EHP00306
˚C
A
)
150
1.5