BUT12ATU Fairchild Semiconductor, BUT12ATU Datasheet
Home Discrete Semiconductor Products Transistors (BJT) - Single BUT12ATU
Manufacturer Part Number
BUT12ATU
Description
TRANSISTOR NPN 450V 8A TO-220
Manufacturer
Fairchild Semiconductor
Specifications of BUT12ATU
Transistor Type
NPN
Current - Collector (ic) (max)
8A
Voltage - Collector Emitter Breakdown (max)
450V
Vce Saturation (max) @ Ib, Ic
1.5V @ 1.2A, 6A
Current - Collector Cutoff (max)
1mA
Power - Max
100W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Dc Current Gain (hfe) (min) @ Ic, Vce
-
©2001 Fairchild Semiconductor Corporation
High Voltage Power Switching Applications
NPN Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
* Pulsed Test: PW = 300 s, duty cycle = 1.5%
V
t
V
V
I
I
I
P
T
T
V
I
I
V
t
t
F
C
CP
B
CES
EBO
ON
STG
J
STG
BE
CBO
CEO
C
CEO
CE
Symbol
Symbol
(sat)
(sat)
(sus)
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
Junction Temperature
Storage Temperature
* Collector-Emitter Sustaining Voltage
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Collector Cut-off Current
Emitter Cut-off Current
Turn On Time
Storage Time
Fall Time
Parameter
C
T
=25 C)
: BUT12
: BUT12A
: BUT12
: BUT12A
C
=25 C unless otherwise noted
Parameter
T
C
=25 C unless otherwise noted
BUT12/12A
I
V
V
I
I
V
I
R
C
C
C
B1
CE
BE
CC
L
= 100mA, L = 25mH
= 6A, I
= 6A, I
= 41.6
= - I
= 9V, I
= V
= 250V, I
Test Condition
B2
CES
B
B
= 1.2A
C
= 1.2A
= 1.2A
, V
= 0
C
BE
= 6A
= 0
1.Base
1
Min.
400
- 65 ~ 175
2.Collector
Value
1000
850
400
450
100
150
20
4
8
Typ.
TO-220
Max.
3.Emitter
1.5
1.5
0.8
10
1
1
4
Rev. A1, August 2001
Units
W
V
V
V
V
A
A
Units
A
C
C
mA
mA
V
V
V
s
s
s
Related parts for BUT12ATU
BUT12ATU Summary of contents
... Collector-Emitter Saturation Voltage CE V (sat) * Base-Emitter Saturation Voltage BE t Turn On Time ON t Storage Time STG t Fall Time F * Pulsed Test 300 s, duty cycle = 1.5% ©2001 Fairchild Semiconductor Corporation BUT12/12A T =25 C unless otherwise noted C Parameter : BUT12 : BUT12A : BUT12 : BUT12A = =25 C unless otherwise noted C Test Condition ...
... Package Demensions 1.27 2.54TYP [2.54 ©2001 Fairchild Semiconductor Corporation TO-220 9.90 0.20 (8.70) ø3.60 0.10 1.52 0.10 0.10 0.80 0.10 2.54TYP ] [2.54 ] 0.20 0.20 10.00 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 0.20 –0.05 Dimensions in Millimeters Rev. A1, August 2001 ...
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. A CEx™ FAST FASTr™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...
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