KSC3503DSTSSTU Fairchild Semiconductor, KSC3503DSTSSTU Datasheet

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KSC3503DSTSSTU

Manufacturer Part Number
KSC3503DSTSSTU
Description
TRANSISTOR NPN 300V 100MA TO-126
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of KSC3503DSTSSTU

Transistor Type
NPN
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
300V
Vce Saturation (max) @ Ib, Ic
600mV @ 2mA, 20mA
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 10mA, 10V
Power - Max
7W
Frequency - Transition
150MHz
Mounting Type
Through Hole
Package / Case
TO-126-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
© 2008 Fairchild Semiconductor Corporation
2SC3503/KSC3503 Rev. A1
2SC3503/KSC3503
NPN Epitaxial Silicon Transistor
Applications
• Audio, Voltage Amplifier and Current Source
• CRT Display, Video Output
• General Purpose Amplifier
Features
• High Voltage : V
• Low Reverse Transfer Capacitance : C
• Excellent Gain Linearity for low THD
• High Frequency: 150MHz
• Full thermal and electrical Spice models are available
• Complement to 2SA1381/KSA1381.
Absolute Maximum Ratings*
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics*
* Device mounted on minimum pad size
h
BV
BV
BV
I
I
P
T
R
C
CP
FE
J
C
θJC
, T
CBO
CEO
EBO
Symbol
Symbol
STG
Classification
Classification
h
FE
Thermal Resistance, Junction to Case
CEO
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Total Device Dissipation, T
T
Junction and Storage Temperature
C
=125°C
= 300V
re
T
40 ~ 80
a
= 1.8pF at V
=25°C unless otherwise noted
C
C
=25°C
Parameter
Parameter
T
a
= 25°C unless otherwise noted
CB
= 30V
1
60 ~ 120
D
100 ~ 200
E
1
1. Emitter
- 55 ~ +150
Ratings
Max.
300
300
100
200
1.2
17.8
5
7
2.Collector
TO-126
160 ~ 320
www.fairchildsemi.com
March 2008
F
Units
Units
3.Base
°C/W
mA
mA
°C
W
W
V
V
V

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KSC3503DSTSSTU Summary of contents

Page 1

... These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics* Symbol R Thermal Resistance, Junction to Case θJC * Device mounted on minimum pad size h Classification FE Classification h FE © 2008 Fairchild Semiconductor Corporation 2SC3503/KSC3503 Rev 1.8pF 30V 25°C unless otherwise noted a Parameter =25° =25° ...

Page 2

... Affix “-S-” means the standard TO126 Package.(see package dimensions). If the affix is ”-STS-” instead of “-S-”, that mean the short-lead TO126 package. 2. Suffix “-TU” means the tube packing, The Suffix “TU” could be replaced to other suffix character as packing method. © 2008 Fairchild Semiconductor Corporation 2SC3503/KSC3503 Rev =25° ...

Page 3

... I [mA], COLLECTOR CURRENT C Figure 3. DC current Gain 160 140 120 100 0.0 0.2 0.4 0.6 V [V], BASE-EMITTER VOLTAGE BE Figure 5. Base-Emitter On Voltage © 2008 Fairchild Semiconductor Corporation 2SC3503/KSC3503 Rev 10V CE 1 0.1 0.01 100 1000 Figure 4. Base-Emitter Saturation Voltage 100 V = 10V ...

Page 4

... V [V], COLLECTOR-BASE VOLTAGE CB Figure 7. Reverse Transfer Capacitance 1000 I MAX. (Pulse MAX. C 100 [V], COLLECTOR-EMITTER VOLTAGE CE Figure 9. Safe Operating Area © 2008 Fairchild Semiconductor Corporation 2SC3503/KSC3503 Rev. A1 (Continued) 1000 f=1MHz 100 10 1 0.1 100 1000 Figure 8. Current Gain Gandwidth Product 1ms 10ms 100 ...

Page 5

... Package Dimensions ø3.20 ±0.10 0.75 1.60 0.75 2.28TYP [2.28±0.20] © 2008 Fairchild Semiconductor Corporation 2SC3503/KSC3503 Rev. A1 TO-126 8.00 ±0.30 ±0.10 ±0.10 ±0.10 #1 2.28TYP [2.28±0.20] 5 ±0.20 3.25 (1.00) (0.50) 1.75 ±0.20 +0.10 0.50 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...

Page 6

... TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ ® ...

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