PBSS4350S,126 NXP Semiconductors, PBSS4350S,126 Datasheet - Page 2

• Manufacturer Part Number: PBSS4350S,126
• Description: TRANS NPN 50V 3A LOW SAT TO92
• Manufacturer: NXP Semiconductors

Specifications of PBSS4350S,126

• Transistor Type: NPN
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 290mV @ 200mA, 2A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 2A, 2V
• Power - Max: 830mW
• Frequency - Transition: 100MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 934056901126; PBSS4350S AMO; PBSS4350S AMO

NXP Semiconductors
FEATURES
• High power dissipation (830 mW)
• Ultra low collector-emitter saturation voltage
• 3 A continuous current
• High current switching
• Improved device reliability due to reduced heat
APPLICATIONS
• Medium power switching and muting
• Linear regulators
• DC/DC convertor
• Supply line switching circuits
• Battery management applications
• Strobe flash units
• Heavy duty battery powered equipment (motor and lamp
DESCRIPTION
NPN low V
PNP complement: PBSS5350S.
MARKING
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint.
2004 Aug 20
PBSS4350S
V
V
V
I
I
I
P
T
T
T
SYMBOL
C
CM
BM
generation.
drivers).
stg
j
amb
CBO
CEO
EBO
tot
50 V low V
TYPE NUMBER
CEsat
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
transistor in a SOT54 plastic package.
CEsat
PARAMETER
NPN transistor
MARKING CODE
S4350S
open emitter
open base
open collector
T
amb
≤ 25 °C; note 1
2
CONDITIONS
QUICK REFERENCE DATA
PINNING
handbook, halfpage
V
I
I
R
SYMBOL
C
CM
CEO
CEsat
Fig.1
PIN
1
2
3
Simplified outline (SOT54) and symbol.
1
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
base
collector
emitter
2
3
PARAMETER
−
−
−
−
−
−
−
−65
−
−65
DESCRIPTION
MIN.
60
50
6
3
5
1
830
+150
150
+150
PBSS4350S
MAM259
Product data sheet
MAX.
50
3
5
<145
MAX.
1
V
V
V
A
A
A
mW
°C
°C
°C
UNIT
2
3
V
A
A
mΩ
UNIT