PBSS4350S,126 NXP Semiconductors, PBSS4350S,126 Datasheet - Page 4

• Manufacturer Part Number: PBSS4350S,126
• Description: TRANS NPN 50V 3A LOW SAT TO92
• Manufacturer: NXP Semiconductors

Specifications of PBSS4350S,126

• Transistor Type: NPN
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 290mV @ 200mA, 2A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 2A, 2V
• Power - Max: 830mW
• Frequency - Transition: 100MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 934056901126; PBSS4350S AMO; PBSS4350S AMO

NXP Semiconductors
2004 Aug 20
handbook, halfpage
handbook, halfpage
50 V low V
V CEsat
V
(1) T
(2) T
(3) T
Fig.2
I
(1) T
(2) T
(3) T
Fig.4
C
(mV)
CE
/I
h FE
B
600
500
400
300
200
100
10
10
= 2 V.
= 20.
10
amb
amb
amb
amb
amb
amb
1
0
10
10
3
2
−1
−1
= 150 °C.
= 25 °C.
= −55 °C.
= 150 °C.
= 25 °C.
= −55 °C.
DC current gain as a function of collector
current; typical values.
Collector-emitter saturation voltage as a
function of collector current; typical values.
1
1
CEsat
10
10
(1)
(2)
(3)
NPN transistor
10
10
(1)
(3)
2
2
(2)
10
10
3
I C (mA)
3
I C (mA)
MLD758
MLD760
10
10
4
4
4
handbook, halfpage
handbook, halfpage
V BEsat
V
(1) T
(2) T
(3) T
Fig.3
I
(1) T
(2) T
(3) T
Fig.5
C
(V)
V BE
CE
/I
(V)
B
= 2 V.
1.2
0.8
0.6
0.4
0.2
1.2
0.8
0.6
0.4
0.2
= 20.
amb
amb
amb
amb
amb
amb
1
0
1
0
10
10
−1
−1
= −55 °C.
= 25 °C.
= 150 °C.
= −55 °C.
= 25 °C.
= 150 °C.
Base-emitter voltage as a function of
collector current; typical values.
Base-emitter saturation voltage as a
function of collector current; typical values.
1
1
10
10
(1)
(2)
(3)
10
10
(1)
(2)
(3)
2
2
PBSS4350S
Product data sheet
10
10
3
3
I C (mA)
I C (mA)
MLD759
MLD761
10
10
4
4