PBSS4350S,126 NXP Semiconductors, PBSS4350S,126 Datasheet - Page 6

• Manufacturer Part Number: PBSS4350S,126
• Description: TRANS NPN 50V 3A LOW SAT TO92
• Manufacturer: NXP Semiconductors

Specifications of PBSS4350S,126

• Transistor Type: NPN
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 290mV @ 200mA, 2A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 2A, 2V
• Power - Max: 830mW
• Frequency - Transition: 100MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 934056901126; PBSS4350S AMO; PBSS4350S AMO

NXP Semiconductors
PACKAGE OUTLINE
2004 Aug 20
50 V low V
Plastic single-ended leaded (through hole) package; 3 leads
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
UNIT
mm
VERSION
OUTLINE
SOT54
D
5.2
5.0
A
0.48
0.40
CEsat
d
b
E
3
1
2
0.66
0.55
b 1
NPN transistor
IEC
b
1
0.45
0.38
c
4.8
4.4
D
JEDEC
TO-92
1.7
1.4
d
REFERENCES
0
4.2
3.6
E
2.54
A
e
SC-43A
JEITA
scale
2.5
6
1.27
e 1
14.5
12.7
5 mm
L
L 1
L
max.
2.5
1
(1)
L
PROJECTION
EUROPEAN
PBSS4350S
Product data sheet
ISSUE DATE
b
04-06-28
04-11-16
c
e 1
e
SOT54