PBSS4350S,126 NXP Semiconductors, PBSS4350S,126 Datasheet - Page 3
PBSS4350S,126
Manufacturer Part Number
PBSS4350S,126
Description
TRANS NPN 50V 3A LOW SAT TO92
Manufacturer
NXP Semiconductors
Datasheet
1.PBSS4350S126.pdf
(8 pages)
Specifications of PBSS4350S,126
Transistor Type
NPN
Current - Collector (ic) (max)
3A
Voltage - Collector Emitter Breakdown (max)
50V
Vce Saturation (max) @ Ib, Ic
290mV @ 200mA, 2A
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 2A, 2V
Power - Max
830mW
Frequency - Transition
100MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
934056901126
PBSS4350S AMO
PBSS4350S AMO
PBSS4350S AMO
PBSS4350S AMO
NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint.
CHARACTERISTICS
T
Note
1. Pulse test: t
2004 Aug 20
R
I
I
h
V
R
V
V
f
C
SYMBOL
SYMBOL
amb
CBO
EBO
T
FE
CEsat
BEsat
BEon
50 V low V
th j-a
CEsat
c
= 25 °C unless otherwise specified.
thermal resistance from junction to
ambient
collector-base cut-off current V
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
equivalent on-resistance
base-emitter saturation
voltage
base-emitter turn-on voltage V
transition frequency
collector capacitance
p
≤ 300 μs; δ ≤ 0.02.
CEsat
PARAMETER
PARAMETER
NPN transistor
V
V
V
V
V
I
I
I
I
I
I
V
C
C
C
C
C
C
CB
CB
EB
CE
CE
CE
CE
CB
= 500 mA; I
= 1 A; I
= 2 A; I
= 2 A; I
= 2 A; I
= 100 mA; V
= 5 V; I
= 50 V; I
= 50 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 10 V; I
in free air; note 1
B
B
B
B
= 50 mA
= 200 mA; note 1
= 200 mA; note 1
= 200 mA; note 1
C
C
C
C
C
E
E
E
CONDITIONS
= 0
= 500 mA
= 1 A; note 1
= 2 A; note 1
= 1 A; note 1
B
= 0
= 0; T
= I
CE
3
= 50 mA
e
CONDITIONS
= 5 V; f = 100 MHz
= 0; f = 1 MHz
j
= 150 °C
−
−
−
200
200
100
−
−
−
−
−
−
100
−
MIN.
VALUE
150
−
−
−
−
−
−
−
−
−
110
−
−
−
−
TYP.
PBSS4350S
Product data sheet
100
50
100
−
−
−
90
170
290
<145
1.2
1.1
−
30
MAX.
UNIT
K/W
nA
μA
nA
mV
mV
mV
mΩ
V
V
MHz
pF
UNIT