BCP 68-25 E6327 Infineon Technologies, BCP 68-25 E6327 Datasheet

TRANSISTOR NPN AF 20V SOT-223

BCP 68-25 E6327

Manufacturer Part Number
BCP 68-25 E6327
Description
TRANSISTOR NPN AF 20V SOT-223
Manufacturer
Infineon Technologies
Datasheet

Specifications of BCP 68-25 E6327

Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Transistor Type
NPN
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
20V
Vce Saturation (max) @ Ib, Ic
500mV @ 100mA, 1A
Dc Current Gain (hfe) (min) @ Ic, Vce
160 @ 500mA, 1V
Power - Max
3W
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Maximum Operating Frequency
100 MHz
Collector- Emitter Voltage Vceo Max
20 V
Continuous Collector Current
1 A
Power Dissipation
1.5 W
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
BCP6825E6327XT
SP000010721
NPN Silicon AF Transistor
• For general AF applications
• High collector current
• High current gain
• Low collector-emitter saturation voltage
• Complementary type: BCP69 (PNP)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Type
BCP68-25
* Marking is the same as the type-name
1
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current, t
Base current
Peak base current
Total power dissipation-
T
Junction temperature
Storage temperature
Pb-containing package may be available upon special request
S
≤ 114 °C
p
Marking
*
≤ 10 ms
1=B
1)
2=C
Pin Configuration
1
3=E
Symbol
V
V
V
V
I
I
I
I
P
T
T
C
CM
B
BM
j
stg
CEO
CES
CBO
EBO
tot
4=C
4
-
-65 ... 150
Value
100
200
150
20
25
25
-
5
1
2
3
BCP68-25
Package
SOT223
2008-10-10
Unit
V
A
mA
W
°C
1
2
3

Related parts for BCP 68-25 E6327

BCP 68-25 E6327 Summary of contents

Page 1

NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BCP69 (PNP) • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type Marking BCP68-25 ...

Page 2

Thermal Resistance Parameter 1) Junction - soldering point Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-base breakdown voltage µ Collector-emitter ...

Page 3

... I C EHP00277 10 mA Ι Ι C Collector cutoff current I V CBO EHP00279 10 nA Ι CBO 0 sat 3 BCP68- CEsat FE BCP 100 ˚ ˚C -50 ˚ 0.2 0.4 0.6 = ƒ (T CBO = 25 V BCP max 3 typ 100 2008-10-10 EHP00278 V 0.8 V CEsat ) A EHP00276 ˚C 150 T A ...

Page 4

... Transition frequency BCP MHz Permissible Pulse Load Total power dissipation P C EHP00275 3.5 W 2.5 1.5 0 Ι ƒ Permissible Pulse Load thJS p P totmax 0,5 0,2 0,1 10 0,05 0,02 0,01 0,005 BCP68- tot 105 120 ° ƒ totDC 0.005 0.01 0.02 ...

Page 5

Package Outline Foot Print Marking Layout (Example) Packing Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel Pin 1 Package SOT223 6.5 ±0 ±0 2.3 0.7 ±0.1 4.6 0. ...

Page 6

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

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