PBRN113EK,115 NXP Semiconductors, PBRN113EK,115 Datasheet

TRANS NPN W/RES 40V SC-59A

PBRN113EK,115

Manufacturer Part Number
PBRN113EK,115
Description
TRANS NPN W/RES 40V SC-59A
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PBRN113EK,115

Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
600mA
Voltage - Collector Emitter Breakdown (max)
40V
Resistor - Base (r1) (ohms)
1K
Resistor - Emitter Base (r2) (ohms)
1K
Dc Current Gain (hfe) (min) @ Ic, Vce
180 @ 300mA, 5V
Vce Saturation (max) @ Ib, Ic
1.15V @ 8mA, 800mA
Current - Collector Cutoff (max)
500nA
Power - Max
250mW
Mounting Type
Surface Mount
Package / Case
SC-59-3, SMT3, SOT-346, TO-236
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934058955115
PBRN113EK T/R
PBRN113EK T/R
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
800 mA NPN low V
Transistors (RET) family in small plastic packages.
Table 1.
[1]
I
I
I
I
I
I
Table 2.
Type number
PBRN113EK
PBRN113ES
PBRN113ET
Symbol
V
I
O
CEO
PBRN113E series
NPN 800 mA, 40 V BISS RETs; R1 = 1 k , R2 = 1 k
Rev. 01 — 1 March 2007
800 mA output current capability
High current gain h
Built-in bias resistors
Simplifies circuit design
Digital application in automotive and
industrial segments
Medium current peripheral driver
Also available in SOT54A and SOT54 variant packages (see
Parameter
collector-emitter voltage
output current
Product overview
Quick reference data
[1]
PBRN113EK, PBRN113ET
PBRN113ES
CEsat
FE
Package
NXP
SOT346
SOT54
SOT23
Breakthrough In Small Signal (BISS) Resistor-Equipped
Conditions
open base
I
I
I
I
I
JEITA
SC-59A
SC-43A
-
Low collector-emitter saturation voltage
V
Reduces component count
Reduces pick and place costs
Switching loads
10 % resistor ratio tolerance
CEsat
Section
2).
[1]
Min
-
-
-
Product data sheet
JEDEC
TO-236
TO-92
TO-236AB
Typ
-
-
-
Max
40
600
800
Unit
V
mA
mA

Related parts for PBRN113EK,115

PBRN113EK,115 Summary of contents

Page 1

PBRN113E series NPN 800 mA BISS RETs Rev. 01 — 1 March 2007 1. Product profile 1.1 General description 800 mA NPN low V Transistors (RET) family in small ...

Page 2

... NXP Semiconductors Table 2. Symbol I ORM R1 R2/R1 [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 2. Pinning information Table 3. Pin SOT54 SOT54A SOT54 variant SOT23; SOT346 PBRN113E_SER_1 Product data sheet NPN 800 mA BISS RETs Quick reference data …continued ...

Page 3

... NXP Semiconductors 3. Ordering information Table 4. Type number PBRN113EK PBRN113ES PBRN113ET [1] Also available in SOT54A and SOT54 variant packages (see 4. Marking Table 5. Type number PBRN113EK PBRN113ES PBRN113ET [ made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 6. In accordance with the Absolute Maximum Rating System (IEC 60134). ...

Page 4

... NXP Semiconductors Table 6. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol P tot amb T stg [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm ...

Page 5

... NXP Semiconductors Fig 2. Power derating curve for SOT54 (SC-43A/TO-92) 6. Thermal characteristics Table 7. Symbol R th(j-a) R th(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm [3] Device mounted on a ceramic PCB, Al ...

Page 6

... NXP Semiconductors th(j-a) 0.75 (K/W) 0.50 0. 0.20 0.10 0.05 10 0.02 0. FR4 PCB, standard footprint Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT23 (TO-236AB) and SOT346 (SC-59A/TO-236); typical values th(j- (K/W) 0.75 0. 0.33 0.20 0.10 0.05 10 0.02 ...

Page 7

... NXP Semiconductors th(j-a) (K/ 0. 0.50 0.33 0.20 0.10 0.05 10 0.02 0. Ceramic PCB standard footprint 2 3 Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT23 (TO-236AB) and SOT346 (SC-59A/TO-236); typical values th(j-a) (K/ 0. 0.50 0.33 0.20 0.10 10 0.05 ...

Page 8

... NXP Semiconductors 7. Characteristics Table unless otherwise specified. amb Symbol I CBO I CEO I EBO CEsat V I(off) V I(on) R1 R2/ [1] Pulse test: t PBRN113E_SER_1 Product data sheet NPN 800 mA BISS RETs Characteristics Parameter Conditions collector-base cut-off V CB current collector-emitter cut-off V CE current emitter-base cut-off V EB ...

Page 9

... NXP Semiconductors (1) ( 100 C amb ( amb ( amb Fig 7. DC current gain as a function of collector current; typical values 1 V CEsat (V) ( 100 C amb ( amb ( amb Fig 9. Collector-emitter saturation voltage as a function of collector current; typical values PBRN113E_SER_1 Product data sheet NPN 800 mA BISS RETs ...

Page 10

... NXP Semiconductors 10 V I(on) (V) (1) ( amb ( amb ( 100 C amb Fig 11. On-state input voltage as a function of collector current; typical values PBRN113E_SER_1 Product data sheet NPN 800 mA BISS RETs 006aab008 10 V I(off) ( (mA (1) T amb (2) T amb (3) T amb Fig 12. Off-state input voltage as a function of collector current ...

Page 11

... NXP Semiconductors 8. Package outline 3.1 2.7 3 3.0 1.7 2.5 1.3 1 1.9 Dimensions in mm Fig 13. Package outline SOT346 (SC-59A/TO-236) 4.2 3.6 3 max 4.8 4.4 5.2 14.5 5.0 12.7 Dimensions in mm Fig 15. Package outline SOT54A Fig 17. Package outline SOT23 (TO-236AB) PBRN113E_SER_1 Product data sheet NPN 800 mA BISS RETs ...

Page 12

... NXP Semiconductors 9. Packing information Table 9. The indicated -xxx are the last three digits of the 12NC ordering code. Type number Package PBRN113EK PBRN113ES PBRN113ET [1] For further information and the availability of packing methods, see 10. Soldering Fig 18. Reflow soldering footprint SOT346 (SC-59A/TO-236) PBRN113E_SER_1 Product data sheet NPN 800 mA BISS RETs ...

Page 13

... NXP Semiconductors Fig 19. Wave soldering footprint SOT346 (SC-59A/TO-236) Fig 20. Reflow soldering footprint SOT23 (TO-236AB) PBRN113E_SER_1 Product data sheet NPN 800 mA BISS RETs 4.70 2.80 5.20 4.60 1.20 1 1.20 (2x) 3.40 preferred transport direction during soldering 2.90 2.50 0.85 2 3.00 1.30 0. ...

Page 14

... NXP Semiconductors 4.60 Fig 21. Wave soldering footprint SOT23 (TO-236AB) PBRN113E_SER_1 Product data sheet NPN 800 mA BISS RETs 3.40 1.20 (2x 4.00 1.20 3 2.80 4.50 Rev. 01 — 1 March 2007 PBRN113E series solder lands solder resist occupied area Dimensions in mm preferred transport direction during soldering sot023 © ...

Page 15

... NXP Semiconductors 11. Revision history Table 10. Revision history Document ID Release date PBRN113E_SER_1 20070301 PBRN113E_SER_1 Product data sheet NPN 800 mA BISS RETs Data sheet status Change notice Product data sheet - Rev. 01 — 1 March 2007 PBRN113E series Supersedes - © NXP B.V. 2007. All rights reserved. ...

Page 16

... For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail ...

Page 17

... NXP Semiconductors 14. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 3 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 5 Limiting values Thermal characteristics Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 8 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 9 Packing information Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 15 12 Legal information ...

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