PBRN113EK,115 NXP Semiconductors, PBRN113EK,115 Datasheet - Page 11

• Manufacturer Part Number: PBRN113EK,115
• Description: TRANS NPN W/RES 40V SC-59A
• Manufacturer: NXP Semiconductors

Specifications of PBRN113EK,115

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Resistor - Base (r1) (ohms): 1K
• Resistor - Emitter Base (r2) (ohms): 1K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 180 @ 300mA, 5V
• Vce Saturation (max) @ Ib, Ic: 1.15V @ 8mA, 800mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-59-3, SMT3, SOT-346, TO-236
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934058955115; PBRN113EK T/R; PBRN113EK T/R

NXP Semiconductors
8. Package outline
PBRN113E_SER_1
Product data sheet
Fig 13. Package outline SOT346 (SC-59A/TO-236)
Fig 15. Package outline SOT54A
Fig 17. Package outline SOT23 (TO-236AB)
3.0
2.5
4.2
3.6
4.8
4.4
Dimensions in mm
Dimensions in mm
1.7
1.3
1
5.2
5.0
3 max
1.9
3.1
2.7
3
14.5
12.7
2.5
2.1
Dimensions in mm
2
0.50
0.35
1.4
1.2
0.6
0.2
1
1
2
3
0.48
0.40
2.54
0.26
0.10
1.3
1.0
0.45
0.38
Rev. 01 — 1 March 2007
04-11-11
04-06-28
5.08
3.0
2.8
1.9
3
NPN 800 mA, 40 V BISS RETs; R1 = 1 k , R2 = 1 k
Fig 14. Package outline SOT54 (SC-43A/TO-92)
Fig 16. Package outline SOT54 variant
4.2
3.6
4.8
4.4
4.2
3.6
4.8
4.4
Dimensions in mm
Dimensions in mm
2
0.48
0.38
0.45
0.15
5.2
5.0
5.2
5.0
1.1
0.9
0.15
0.09
PBRN113E series
04-11-04
max
2.5
14.5
12.7
14.5
12.7
© NXP B.V. 2007. All rights reserved.
1
2
3
1
2
3
0.45
0.38
0.48
0.40
0.48
0.40
1.27
1.27
0.45
0.38
1.27
04-11-16
05-01-10
2.54
2.54
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