PBRN113EK,115 NXP Semiconductors, PBRN113EK,115 Datasheet - Page 6

• Manufacturer Part Number: PBRN113EK,115
• Description: TRANS NPN W/RES 40V SC-59A
• Manufacturer: NXP Semiconductors

Specifications of PBRN113EK,115

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Resistor - Base (r1) (ohms): 1K
• Resistor - Emitter Base (r2) (ohms): 1K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 180 @ 300mA, 5V
• Vce Saturation (max) @ Ib, Ic: 1.15V @ 8mA, 800mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-59-3, SMT3, SOT-346, TO-236
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934058955115; PBRN113EK T/R; PBRN113EK T/R

NXP Semiconductors
PBRN113E_SER_1
Product data sheet
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration for
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration for
Z
Z
(K/W)
(K/W)
th(j-a)
th(j-a)
10
10
10
10
10
10
10
10
1
1
3
2
1
10
3
2
1
10
FR4 PCB, standard footprint
SOT23 (TO-236AB) and SOT346 (SC-59A/TO-236); typical values
FR4 PCB, mounting pad for collector 1 cm
SOT23 (TO-236AB) and SOT346 (SC-59A/TO-236); typical values
5
5
0.50
0.20
0.10
0.05
0.02
0.01
0.50
0.20
0.10
0.05
0.02
0.01
= 1
= 1
0
0
0.75
0.33
0.75
0.33
10
10
4
4
10
10
3
3
2
10
10
2
2
Rev. 01 — 1 March 2007
10
10
1
1
NPN 800 mA, 40 V BISS RETs; R1 = 1 k , R2 = 1 k
1
1
PBRN113E series
10
10
10
10
2
2
© NXP B.V. 2007. All rights reserved.
t
t
p
p
006aab000
006aab001
(s)
(s)
10
10
3
3
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