PBRN113EK,115 NXP Semiconductors, PBRN113EK,115 Datasheet - Page 13

• Manufacturer Part Number: PBRN113EK,115
• Description: TRANS NPN W/RES 40V SC-59A
• Manufacturer: NXP Semiconductors

Specifications of PBRN113EK,115

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Resistor - Base (r1) (ohms): 1K
• Resistor - Emitter Base (r2) (ohms): 1K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 180 @ 300mA, 5V
• Vce Saturation (max) @ Ib, Ic: 1.15V @ 8mA, 800mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-59-3, SMT3, SOT-346, TO-236
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934058955115; PBRN113EK T/R; PBRN113EK T/R

NXP Semiconductors
PBRN113E_SER_1
Product data sheet
Fig 19. Wave soldering footprint SOT346 (SC-59A/TO-236)
Fig 20. Reflow soldering footprint SOT23 (TO-236AB)
3.00
5.20
0.85
0.85
4.60
1.30
1.20
Rev. 01 — 1 March 2007
2
1.20 (2x)
2.90
2.50
1.00
3.30
NPN 800 mA, 40 V BISS RETs; R1 = 1 k , R2 = 1 k
3
1
4.70
2.80
3.40
0.50 (3x)
0.60 (3x)
preferred transport direction during soldering
3
1
2
0.60
(3x)
PBRN113E series
sot023
2.70
Dimensions in mm
Dimensions in mm
solder lands
solder resist
occupied area
solder lands
solder resist
solder paste
occupied area
© NXP B.V. 2007. All rights reserved.
sot346
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