BB 804 SF1 E6327 Infineon Technologies, BB 804 SF1 E6327 Datasheet - Page 2

• Manufacturer Part Number: BB 804 SF1 E6327
• Description: DIODE VAR CAP 18V 50MA SOT-23
• Manufacturer: Infineon Technologies

Specifications of BB 804 SF1 E6327

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Capacitance @ Vr, F: 47.5pF @ 2V, 1MHz
• Capacitance Ratio: 1.71
• Capacitance Ratio Condition: C2/C8
• Voltage - Peak Reverse (max): 18V
• Diode Type: 1 Pair Common Cathode
• Q @ Vr, F: 200 @ 2V, 100 MHz
• Mounting Type: Surface Mount
• Capacitance: 42 pF
• Reverse Voltage: 20 V
• Configuration: Dual Common Cathode
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 55 C
• Minimum Tuning Ratio: 1.65
• Mounting Style: SMD/SMT
• Tuning Ratio Test Condition: 2 / 8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BB804SF1E6327XT; SP000010425

1
C
C
C
The capacitance subgroup is marked by the subgroup number printed on the component and the package
label. A packing unit (e.g. 8mm tape) contain diodes of one subgroup only. Delivery of different
capacitance subgroups requires a special agreement.
Electrical Characteristics at T
Parameter
DC Characteristics
Reverse current
V
V
AC Characteristics
Diode capacitance
V
Capacitance ratio
V
Series resistance
V
Figure of merit
f = 100 MHz, V
Temperature coefficient of diode capacitance
V
Capacitance groups at 2V , coded 1; 2 ; 3
T
2V
2V
R
R
R
R
R
R
/groups
= 16 V
= 16 V, T
= 2 V, f = 1 MHz
= 2 V, V
= 2 V, f = 100 MHz
= 2 V, f = 1 MHz
min
max
R
A
= 8 V, f = 1 MHz
= 65 °C
43pF
44.5pF
R
1
= 2 V
1)
44pF
45.5pF
2
A
46.5pF
45pF
= 25°C, unless otherwise specified
3
2
Symbol
I
C
C
r
Q
TC
R
S
T
T2
C
/ C
T8
min.
1.65
42
-
-
-
-
-
Values
0.18
typ.
1.71
200
330
-
-
-
max.
200
47.5
2007-04-20
20
BB804...
-
-
-
-
Unit
nA
pF
ppm/K