XCF02SVOG20C Xilinx Inc, XCF02SVOG20C Datasheet - Page 15

• Manufacturer Part Number: XCF02SVOG20C
• Description: PROM, PLATFORM FLASH, 2MBIT, 20TSSOP
• Manufacturer: Xilinx Inc

Specifications of XCF02SVOG20C

• Memory Type: Flash
• Memory Size: 2Mbit
• Clock Frequency: 50MHz
• Supply Voltage Range: 2.3V To 2.7V, 3V To 3.6V
• Memory Case Style: TSSOP
• No. Of Pins: 20
• Operating Temperature Range: -40°C To +85°
• Programmable Type: In System Programmable
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 20-TSSOP (0.173", 4.40mm Width)
• Interface Type: Serial, Parallel, JTAG
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 122-1287-5

DC Characteristics Over Operating Conditions
DS123 (v2.18) May 19, 2010
Product Specification
Notes:
1.
2.
3.
V
V
I
I
I
I
I
I
I
I
I
I
I
C
C
CCINT
CCO
CCJ
CCINTS
CCOS
CCJS
ILJ
IL
IH
ILP
IHP
OH
OL
Symbol
IN
OUT
Output driver supply current specification based on no load conditions.
TDI/TMS/TCK non-static (active).
CE High, OE Low, and TMS/TDI/TCK static.
(1)
R
High-level output voltage for 3.3V outputs
High-level output voltage for 2.5V outputs
High-level output voltage for 1.8V outputs
Low-level output voltage for 3.3V outputs
Low-level output voltage for 2.5V outputs
Low-level output voltage for 1.8V outputs
Internal voltage supply current, active mode
Output driver supply current, active serial mode
Output driver supply current, active parallel mode
JTAG supply current, active mode
Internal voltage supply current, standby mode
Output driver supply current, standby mode
JTAG supply current, standby mode
JTAG pins TMS, TDI, and TDO pull-up current
Input leakage current
Input and output High-Z leakage current
Source current through internal pull-ups on
EN_EXT_SEL, REV_SEL0, REV_SEL1
Sink current through internal pull-down on BUSY
Input capacitance
Output capacitance
Description
www.xilinx.com
Platform Flash In-System Programmable Configuration PROMs
I
OH
I
I
I
V
V
V
V
Conditions
OH
V
OL
I
f = 1.0 MHz
f = 1.0 MHz
OH
I
V
V
V
V
V
OL
OL
CCINT
CCINT
IN
IN
CCJ
CCO
CCO
Note (2)
Note (3)
Note (3)
Note (3)
33 MHz
33 MHz
IN
IN
IN
= –500 µA
= 500 µA
= –50 µA
= GND or
V
= GND or
V
Test
= –4 mA
XCF01S, XCF02S,
= 50 µA
= 4 mA
= GND
= GND
= GND
CCO
CCO
–
–
–
= max
= max
= max
= max
= max
XCF04S
V
V
– 0.4
– 0.4
Min
–10
–10
2.4
CCO
CCO
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max
100
0.4
0.4
0.4
10
10
10
10
14
–
–
–
–
5
5
1
1
–
–
8
I
OH
I
I
I
V
V
V
V
Conditions
OH
V
V
V
V
V
OL
I
f = 1.0 MHz
f = 1.0 MHz
OH
I
V
V
V
V
V
V
V
OL
OL
CCINT
CCINT
CCINT
CCINT
IN
IN
IN
IN
CCJ
Note (2)
Note (3)
Note (3)
Note (3)
CCO
CCO
CCO
CCO
33 MHz
33 MHz
33 MHz
IN
IN
IN
= –500 µA
= 500 µA
= –50 µA
= GND or
= GND or
= GND or
= GND or
V
V
V
V
Test
= –4 mA
= 50 µA
XCF08P, XCF16P,
= 4 mA
= GND
= GND
= GND
CCO
CCO
CCO
CCO
= max
= max
= max
= max
= max
= max
= max
= max
= max
XCF32P
–100
V
V
– 0.4
– 0.4
Min
–10
–10
2.4
CCO
CCO
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max
100
100
0.4
0.4
0.4
10
10
40
10
10
14
–
–
–
5
1
1
1
–
8
Units
mA
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
pF
pF
V
V
V
V
V
V
15