LTC4225CGN-1#TRPBF Linear Technology, LTC4225CGN-1#TRPBF Datasheet - Page 6

• Manufacturer Part Number: LTC4225CGN-1#TRPBF
• Manufacturer: Linear Technology

Specifications of LTC4225CGN-1#TRPBF

• Lead Free Status / RoHS Status: Compliant

LTC4225-1/LTC4225-2
Typical perForMance characTerisTics
pin FuncTions
CPO1, CPO2: Charge Pump Output. Connect a capacitor
from CPO1 or CPO2 to the corresponding IN1 or IN2 pin.
The value of this capacitor is approximately 10× the gate
capacitance (C
control. The charge stored on this capacitor is used to pull
up the gate during a fast turn-on. Leave this pin open if
fast turn-on is not needed.
DGATE1, DGATE2: Ideal Diode MOSFET Gate Drive Out-
put. Connect this pin to the gate of an external N-channel
MOSFET for ideal diode control. An internal clamp limits
the gate voltage to 12V above and a diode voltage below
IN. During fast turn-on, a 1.5A pull-up charges DGATE from
CPO. During fast turn-off, a 1.5A pull-down discharges
DGATE to IN.
EN1, EN2: Enable Input. Ground this pin to enable Hot
Swap control. If this pin is pulled high, the MOSFET is not
allowed to turn on. A 10µA current source pulls this pin
up to a diode below INTV
is high, an internal timer provides a 100ms start-up delay
for debounce, after which the fault is cleared.
Exposed Pad (UFD Package): The exposed pad may be
left open or connected to device ground.
6
–10.5
–11.0
–10.0
–9.5
–9.0
–50
HGATE Pull-Up Current
vs Temperature
–25
ISS
TEMPERATURE (°C)
0
) of the external MOSFET for ideal diode
25
CC
50
. Upon EN going low when ON
75
422512 G10
100
–103
–102
–101
–100
–99
–98
–97
–50
TMR Pull-Up Current
vs Temperature
–25
TEMPERATURE (°C)
0
25
FAULT1, FAULT2: Fault Status Output. Open-drain output
that is normally pulled high by a 10µA current source to a
diode below INTV
an external pull-up. It pulls low when the circuit breaker
is tripped after an overcurrent fault timeout. Leave open
if unused.
GND: Device Ground.
HGATE1, HGATE2: Hot Swap MOSFET Gate Drive Output.
Connect this pin to the gate of the external N-channel
MOSFET for Hot Swap control. An internal 10µA current
source charges the MOSFET gate. An internal clamp limits
the gate voltage to 12V above and a diode below OUT.
During turn-off, a 300µA pull-down discharges HGATE to
ground. During an output short or INTV
lockout, a fast 200mA pull-down discharges HGATE to OUT.
IN1, IN2: Positive Supply Input and MOSFET Gate Drive
Return. The 5V INTV
IN2 via an internal diode-OR. The voltage sensed at this
pin is used to control DGATE for forward voltage regulation
and reverse turn-off. It also senses the positive side of
the current sense resistor. The gate fast pull-down current
returns through this pin when DGATE is discharged.
50
75
T
422512 G11
A
= 25°C, V
100
CC
. It may be pulled above INTV
CC
IN
0.8
0.4
0.2
0.6
= 12V, unless otherwise noted.
supply is generated from IN1 and
0
0
PWRGD, FAULT Output Low
Voltage vs Current
1
CURRENT (mA)
2
CC
3
undervoltage
CC
4
422512 G12
using
422512f
5