MT47H128M16RT-25E:C Micron Technology Inc, MT47H128M16RT-25E:C Datasheet - Page 21

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MT47H128M16RT-25E:C

Manufacturer Part Number
MT47H128M16RT-25E:C
Description
DRAM Chip DDR2 SDRAM 2G-Bit 128Mx16 1.8V 84-Pin FBGA Tray
Manufacturer
Micron Technology Inc
Type
DDR2 SDRAMr
Series
-r
Datasheet

Specifications of MT47H128M16RT-25E:C

Package
84FBGA
Density
2 Gb
Address Bus Width
17 Bit
Operating Supply Voltage
1.8 V
Maximum Clock Rate
800 MHz
Maximum Random Access Time
0.4 ns
Operating Temperature
0 to 70 °C
Format - Memory
RAM
Memory Type
DDR2 SDRAM
Memory Size
2G (128M x 16)
Speed
2.5ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Package / Case
84-TFBGA
Lead Free Status / RoHS Status
Compliant

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Figure 10: 60-Ball FBGA Package (11.5mm x 14mm) – x4, x8
PDF: 09005aef824f87b6
2gbddr2.pdf – Rev. E 06/10 EN
Solder ball
material: SAC305.
Dimensions
apply to solder
balls post-reflow
on Ø0.33 NSMD
ball pads.
Seating
60X Ø0.45
plane
0.12 A
8 CTR
0.8 TYP
A
Notes:
9 8 7
1. All dimensions are in millimeters.
2. Solder ball material: SAC305 (96.5% Sn, 3% Ag, 0.5% Cu).
0.8 TYP
11.5 ±0.15
6.4 CTR
3 2 1
A
B
C
D
E
F
G
H
J
K
L
0.8 ±0.1
21
Ball A1 ID
14 ±0.15
Micron Technology, Inc. reserves the right to change products or specifications without notice.
0.25 MIN
2Gb: x4, x8, x16 DDR2 SDRAM
1.2 MAX
Ball A1 ID
© 2006 Micron Technology, Inc. All rights reserved.
Packaging

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