MT47H128M16RT-25E:C Micron Technology Inc, MT47H128M16RT-25E:C Datasheet - Page 40

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MT47H128M16RT-25E:C

Manufacturer Part Number
MT47H128M16RT-25E:C
Description
DRAM Chip DDR2 SDRAM 2G-Bit 128Mx16 1.8V 84-Pin FBGA Tray
Manufacturer
Micron Technology Inc
Type
DDR2 SDRAMr
Series
-r
Datasheet

Specifications of MT47H128M16RT-25E:C

Package
84FBGA
Density
2 Gb
Address Bus Width
17 Bit
Operating Supply Voltage
1.8 V
Maximum Clock Rate
800 MHz
Maximum Random Access Time
0.4 ns
Operating Temperature
0 to 70 °C
Format - Memory
RAM
Memory Type
DDR2 SDRAM
Memory Size
2G (128M x 16)
Speed
2.5ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Package / Case
84-TFBGA
Lead Free Status / RoHS Status
Compliant

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Table 12: AC Operating Specifications and Conditions (Continued)
Not all speed grades listed may be supported for this device; refer to the title page for speeds supported; Notes: 1–5 apply to the entire table;
V
DDQ
ODT to power-
down entry latency
ODT power-down
exit latency
ODT turn-on delay
ODT turn-off delay
ODT turn-on
ODT turn-off
ODT turn-on
(power-down
mode)
ODT turn-off
(power-down
mode)
ODT enable from
MRS command
= +1.8V ±0.1V, V
Parameter
AC Characteristics
DD
Symbol
t
t
t
AONPD
t
t
t
AOFPD
= +1.8V ±0.1V
t
AOND
ANPD
AOFD
t
AXPD
t
MOD
AON
AOF
(MIN)
(MIN)
2,000
Min
t
t
11
AC
AC
4
+
-187E
(MAX)
(MAX)
2,575
1,000
t
Max
CK +
t
t
2 ×
AC
AC
+
+
Min
MAX =
10
3
-25E
MIN =
Max
t
AC (MAX) + 600
t
AC (MIN)
Min
MAX = 2.5 ×
10
3
-25
MAX =
MIN =
Max
MAX = 2 ×
MIN =
t
t
MAX = n/a
CK +
AC (MIN) + 2,000
Min
t
MIN = 12
MAX =
MIN =
AC (MAX) + 600
3
8
t
2.5
-3E
AC (MIN)
2
MIN =
t
AC (MAX) + 1,000
t
CK +
Max
t
AC (MIN) + 2,000
t
AC (MAX) + 700
t
AC (MIN)
t
AC (MAX) + 1,000
Min
3
8
-3
Max
MAX =
Min
3
8
-37E
MIN =
Max
t
AC (MAX) + 1,000
t
AC (MIN)
Min
3
8
-5E
Max
Units Notes
t
t
t
t
CK
CK
CK
CK
ps
ps
ps
ps
ns
18, 45
19, 46
47, 48
18, 50
18
18
18
49

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