MT49H32M9BM-25 Micron Technology Inc, MT49H32M9BM-25 Datasheet - Page 32

• Manufacturer Part Number: MT49H32M9BM-25
• Manufacturer: Micron Technology Inc
• Type: RLDRAMr

Specifications of MT49H32M9BM-25

• Organization: 32Mx9
• Density: 288Mb
• Address Bus: 22b
• Maximum Clock Rate: 400MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: uBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 779mA
• Pin Count: 144
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

MODE REGISTER SET (MRS)
PDF: 09005aef80a41b59/Source: 09005aef809f284b
288Mb_RLDRAM_II_CIO.Core.fm - Rev B 5/08 EN
Note:
The mode register set stores the data for controlling the operating modes of the memory.
It programs the RLDRAM configuration, burst length, test mode, and I/O options.
During an MRS command, the address inputs A0–A17 are sampled and stored in the
mode register. After issuing a valid MRS command,
command can be issued to the RLDRAM. This statement does not apply to the consecu-
tive MRS commands needed for internal logic reset during the initialization routine. The
MRS command can only be issued when all banks are idle and no bursts are in progress.
ADDRESS
ADDRESS
The data written by the prior burst length is not guaranteed to be accurate when the
burst length of the device is changed.
BANK
REF#
WE#
CK#
CS#
CK
288Mb: x9, x18, x36 2.5V V
OPCODE
DON’T CARE
31
Micron Technology, Inc., reserves the right to change products or specifications without notice.
EXT
, 1.8V V
t
MRSC must be met before any
DD
, HSTL, CIO, RLDRAM II
©2003 Micron Technology, Inc. All rights reserved.
Commands