MT49H32M9BM-25 Micron Technology Inc, MT49H32M9BM-25 Datasheet - Page 65

• Manufacturer Part Number: MT49H32M9BM-25
• Manufacturer: Micron Technology Inc
• Type: RLDRAMr

Specifications of MT49H32M9BM-25

• Organization: 32Mx9
• Density: 288Mb
• Address Bus: 22b
• Maximum Clock Rate: 400MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: uBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 779mA
• Pin Count: 144
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

Figure 41:
PDF: 09005aef80a41b59/Source: 09005aef809f284b
288Mb_RLDRAM_II_CIO.Core.fm - Rev B 5/08 EN
COMMAND
ADDRESS
BANK
QVLD
QK#
CK#
DQ
QK
CK
Consecutive READ Bursts with Multiplexed Addressing
Notes:
Bank a
READ
T0
Ax
1. DO a = data-out from bank a.
2. Nominal conditions are assumed for specifications not defined.
3. BL = 4.
4. Three subsequent elements of the burst appear following DO a.
5. Example applies only when READ commands are issued to same device.
6. Bank address can be to any bank, but the subsequent READ can only be to the same bank if
7. Data from the READ commands to banks b through bank d will appear on subsequent clock
t
cycles that are not shown.
RC has been met.
NOP
Ay
288Mb: x9, x18, x36 2.5V V
T1
RL = 5
Bank b
READ
T2
Ax
64
NOP
T3
Ay
Micron Technology, Inc., reserves the right to change products or specifications without notice.
EXT
Bank c
READ
, 1.8V V
T4
Ax
TRANSITIONING DATA
DD
, HSTL, CIO, RLDRAM II
T5
NOP
Ay
©2003 Micron Technology, Inc. All rights reserved.
DO
a
T5n
Bank d
READ
T6
Ax
Operations
DON’T CARE
T6n