NAND08GW3B2CN6E NUMONYX, NAND08GW3B2CN6E Datasheet - Page 44

• Manufacturer Part Number: NAND08GW3B2CN6E
• Description: 8GBIT SLC NAND FLASH TSOP
• Manufacturer: NUMONYX

Specifications of NAND08GW3B2CN6E

• Cell Type: NAND
• Density: 8Gb
• Access Time (max): 25us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 30b
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 1G
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / RoHS Status: Compliant

Device operations
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Table 21.
1. O = optional, M = mandatory.
129-130
131-132
133-134
135-136
137-138
139-163
164-165
166-253
254-255
256-511
512-767
768+
Byte
Parameter page data structure (continued)
O/M
M
M
M
M
M
M
M
M
M
M
O
O
(1)
Bit 6 to bit 15 Reserved (0)
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
Bit 6 to bit 15 Reserved (0)
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
1 = supports timing mode 5
1 = supports timing mode 4
1 = supports timing mode 3
1 = supports timing mode 2
1 = supports timing mode 1
1 = supports timing mode 0, shall be 1
1 = supports timing mode 5
1 = supports timing mode 4
1 = supports timing mode 3
1 = supports timing mode 2
1 = supports timing mode 1
1 = supports timing mode 0
t
t
t
Reserved (0)
Vendor specific revision number
Vendor specific
Integrity CRC
Value of bytes 0-255
Value of bytes 0-255
Additional redundant parameter pages
PROG
BERS
R
Program cache timing mode support
maximum page read time (µs)
maximum block erase time (µs)
maximum page program time (µs)
Timing mode support
Description
NAND04G-B2D, NAND08G-BxC