NAND08GW3B2CN6E NUMONYX, NAND08GW3B2CN6E Datasheet - Page 57

• Manufacturer Part Number: NAND08GW3B2CN6E
• Description: 8GBIT SLC NAND FLASH TSOP
• Manufacturer: NUMONYX

Specifications of NAND08GW3B2CN6E

• Cell Type: NAND
• Density: 8Gb
• Access Time (max): 25us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 30b
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 1G
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / RoHS Status: Compliant

NAND04G-B2D, NAND08G-BxC
Figure 28. Sequential data output after read AC waveforms (EDO mode)
1. In EDO mode, CL and AL are Low, V
2. t
Figure 29. Read status register or read EDC status register AC waveform
RLQX
I/O
CL
W
E
R
is applicable for frequencies high than 33 MHz (for instance, t
I/O
RB
R
E
tELQV
tBHRL
(R Accesstime)
tCLHWH
(Data Setup time)
tRLQV
tRLRH
tELWH
tDVWH
IL
, and W is High, V
tRLRL
70h or 7Bh
tWLWH
Data Out
IH
(Data Hold time)
tRHRL
tWHDX
.
tWHCLL
tWHEH
tDZRL
tWHRL
tCLLRL
tRLQX
RLRL
tRLQV
lower than 30 ns).
tRLQV
tELQV
Data Out
Status Register
tEHQX
tRHQZ
tRHQX
tEHQZ
Output
tEHQZ
tEHQX
DC and AC parameters
Data Out
ai13177
tRHQX (2)
tRHQZ
ai13175
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